NTE3027 Infrared Emitting Diode High Speed for Remote Control Description: The NTE3027 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue–grey tinted plastic package. Features: D Low Forward Voltage D High Radiant Power and Radiant Intensity D Suitable for DC and High Pulse Current Operation D High Reliability D Standard T–1 3/4 (5mm) Package Applications: Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation and angle requirements in combination with PIN photodiodes or phototransistors. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Surge Forward Current (Note 2), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210mW Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100°C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C Lead Soldering Temperature (t ≤ 5sec, 2mm from case), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375K/W Note 1. tp = 100µs, tp/T = 0.5 Note 2. tp = 100µs Electrical Characteristics: (TA = +25°C unless otherwis specified) Parameter Symbol Forward Voltage VF Temperature Coefficient of Forward Voltage Test Conditions Min Typ Max Unit IF = 100mA, tp = 20ms – 1.3 1.7 V IF = 1.5A, tp = 100µs – 2.2 3.4 V IF = 100mA – –1.3 – mV/°C Reverse Current IR VR = 5V – – 100 µA Junction Capacitance Cj VR = 0, f = 1MHz, E = 0 – 30 – pF Radient Intensity Ie IF = 100mA, tp = 20ms 10 17 – mW/sr IF = 1.5A, tp = 100µs 85 160 – mW/sr – ±22 – deg IF = 100mA, tp = 20ms – 14 – mW IF = 20mA – –0.8 – %/°C IF = 100mA – 950 – nm IF = 100mA – 0.2 – nm/°C ∆λ IF = 100mA – 50 – nm tr IF = 100mA – 800 – ns IF = 1.5A – 400 – ns IF = 100mA – 800 – ns IF = 1.5A – 400 – ns Angle of Half Intensity Φ Radient Power Φe Temperature Coefficient of Radient Intensity λp Peak Wavelength Temperature Coefficient of Peak Wavelength Spectral Bandwidth Rise Time Fall Time tf .230 (5.84) Dia Flat Denotes Cathode .100 (2.54) .200 (5.08) Dia .340 (8.63) .100 (2.54) R .040 (1.01) Seating Plane .100 (2.54) .750 (19.05) Min .050 (1.27) Typ .025 (0.63) Max Sq .050 (1.27) .100 (2.54) Tolerance ±.010 (.254)