NTE3123 Phototransistor Silicon NPN, Intermediate Acceptance, High Sensitivity, Darlington Features: D Epoxy Resin Package D Compact D Intermediate Acceptance: ∆q = ±40° Typ D Visible Light Cut–Off Applications: D VCRs D Optoelectronic Switches Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Collector Power Disspation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25° to +85°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +85°C Lead Temperature, TL During Soldering, 1.4mm from surface of resin edge, 3sec . . . . . . . . . . . . . . . . . . . . . . +260°C Electrical Characteristics: Parameter Collector Current Collector Dark Current Symbol IC ICBO Test Conditions VCE = 2V, Ev = 2ȏx, Note 1 VCE = 10V, Ee = 0 Collector–Emitter Saturation Voltage VCE(sat) IC = 0.8mA, Ee = Note 1 1mW/cm2, Min Typ Max Unit 0.2 0.4 0.8 mA – – 10–6 A – – 1.0 V – 860 – nm – 400 2000 µs Peak Emission Wavelength λP Response Time (Rise) tr Response Time (Fall) tf – 300 1500 µs Half Intensity Angle ∆q – ±40 – deg. VCE = 2V, IC = 5mA, RL = 100Ω Note 1. Ee, Ev: Illuminance, irradiance by CIE standard light source A (tungsten lamp). .110 (2.8) .045 (1.15) .118 (3.0) .098 (2.5) Dia .059 (1.5) .157 (4.0) .728 (18.5) .118 (3.0) 1.575 (40.0) Emitter Collector .020 (0.5) .100 (2.54)