NTE3033 Infrared Photodiode Features: D High Sensitivity, High Reliability D Fast Response, High Speed Modulation D Peak Sensitivity Wavelength Compatible with Infrared Emitters D Wide Detection Area, Wide Half Angle Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Operating Temperature range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +85°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C Electro–Optical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Dark Current ID VR = 10V – 5 50 nA Light Current IL VR = 10V, L = 1000 1x, Note 1 35 50 – µA Peak Emission Wavelength λP VR = 10V – 900 – nm Rise Time tr VR = 10V, RL = 1kΩ – 50 – ns VR = 10V, RL = 100kΩ – 5 – µs VR = 10V, RL = 1kΩ – 50 – ns VR = 10V, RL = 100kΩ – 5 – µs VR = 0, f = 1MHz – 70 – pF Note 2 – 65 – deg Fall Time Capacitance Beam Angle tf Ct Note 1. Source: Tungsten filament lamp 2856°K Note 2. The angle when the light current is halved. .276 (7.0) .111 (2.8) Device Center .197 (5.0) .315 (8.0) * .091 (2.3) Anode Cathode .512 (13.0) Min .016 (0.41) .024 (0.6) .200 (5.08) * Denotes Anode mark