NTE NTE340

NTE340
Silicon NPN Transistor
RF Power Output, High Frequency
Features:
D High Transition Frequency
D Output of 0.6W can be obtained in the VHF Band (f = 175MHz).
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Peak Collector Voltage, ICP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3A
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 20V, IE = 0
–
–
10
µA
DC Current Gain
hFE
VCE = 13.5V, IC = 100mA
20
50
–
–
VCB = 10V, IE = –100mA, f = 200MHz
1.5
2
–
GHz
–
4
8
pF
Transition Frequency
fT
Collector Output Capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
High–Frequency Output
PO
VCC = 13.5V, PI = 0.03W, f = 175MHz
0.6
0.9
–
W
η
VCC = 13.5V, PI = 0.03W, f = 175MHz
–
60
–
%
Overall Efficiency
.339
(8.62)
Max
Seating Plane
.026 (.66)
Dia Max
.512
(13.0)
Min
E C B
.100 (2.54)
.200
(5.08)
Max
.240 (6.09) Max