NTE NTE56031

NTE56030 & NTE56031
TRIAC, 40 Amp
Isolated Tab
Description:
The NTE56030 and NTE56031 are 40 Amp TRIACs in a TO218 type package with an isolated tab
designed to be driven directly with IC and MOS devices.
Absolute Maximum Ratings:
Peak Repetitive Off–State Voltage (Gate Open, TJ = +110°C, Note 1), VDRM
NTE56030 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE56031 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +80°C, 360° Conduction Angle), IT(RMS) . . . . . . . . . . . . . . . . . . . 40A
Peak Non–Repetitive Surge Current (One Cycle, at 50Hz or 60Hz), ITSM . . . . . . . . . . . . . . . . . 400A
Peak Gate–Trigger Current (t = 3µs), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Gate–Power Dissipation (IGT ≤ IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC(DC) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.95°C/W
Note 1. All values apply in either direction.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Peak Off–State Current
Gate Trigger Current
Quadrant I, II, III
Symbol
IDRM
IGT
Quadrant IV
Test Conditions
Min
Typ
Max
Unit
–
–
0.5
mA
VD = 12V, RL = 30Ω
T2 (+) G (+), T2 (–) G (–) Quads I and III
T2 (+) G (–), T2 (–) G (+) Quads II and IV
–
–
100
mA
–
–
150
mA
–
–
2.5
V
0.2
–
–
V
Gate Open, Note 1
–
–
100
mA
IT = 40A, Note 1
–
–
1.8
V
TJ = +110°C, VD = VDRM, Gate Open, Note
1
Gate Trigger Voltage
VGT
VD = 12V, RL = 30Ω
Gate Non–Trigger Voltage
VGD
VD = VDRM, TJ = +110°C, RL = 3k,
Pulse Duration > 20µs, Note 1
Holding Current
Peak On–State Voltage
IH
VTM
Note 1. All values apply in either direction.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Gate Controlled Turn–On Time
Critical Rate of Rise of
Off–State Voltage
Critical Rate of Rise of
Commutation Voltage
Test Conditions
Min
Typ
Max
Unit
tgt
VD = VDRM, IT = 10A (Peak), IGT = 200mA,
tR = 0.1µs
–
3
–
µs
dv/dt
VD = VDRM, Gate Open, TC = +110°C, Note
1
–
200
–
V/µs
–
5
–
V/µs
dv/dt(c) VD = VDRM, IT = 40A, TC = +80°C
Gate Unenergized, Note 1
Note 1. All values apply in either direction.
.600 (15.24)
.060 (1.52)
.173 (4.4)
Isolated
.156
(3.96)
Dia.
MT1
MT2
.550
(13.97)
.430
(10.92)
Gate
.500
(12.7)
Min
.055 (1.4)
.015 (0.39)
.215 (5.45)
NOTE: Dotted line indicates that case may have square corners.