NTE NTE5538

NTE5538
Silicon Controlled Rectifier (SCR)
800VDRM, 50A
Description:
The NTE5538 general purpose SCR is suited for power supplies up to 400HZ on resistive or inductive
loads.
Features:
D Glass Passivated Chip
D High Stability and Reliability
D High Surge Capability
D High On–State Current
D Easy Mounting on Heatsink
D Isolated Package: Insulating Voltage 2500VRMS
Absolute Maximum Ratings:
Peak Forward Blocking Voltage (TJ = +125°C), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Peak Reverse Blocking Voltage (TJ = +125°C), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current (TC = +70°C, Note 1), IT (RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Average On–State Current (TC = +70°C, Note 1), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A
Non–Repetitive Surge Peak On–State Current (TJ initial = +25°C, Note 2), ITSM
(t = 8.3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525A
(t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A
I2t Value (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1250A2sec
Critical Rate of Rise of On–State Current (Note 3), di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/µs
Storage and Operating Junction Temperature Range, Tstg, TJ . . . . . . . . . . . . . . . . . . –40° to +125°C
Thermal Resistance
Junction–to–Case for DC, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Contact (Case–to–Heatsink), RthCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2°C/W
Note 1. Single phase circuit, 180° conducting angle.
Note 2. Half sine wave.
Note 3. IG = 800mA, diG/dt = 1A/µs.
Gate Characteristics: (Maximum Values)
Peak Gate Power (t = 10µs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Average Gate Power Dissipation, PG (AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Peak Forward Gate Current (t = 10µs), IFGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Forward Gate Voltage (t = 10µs), VFGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate Trigger Current
Gate Trigger Voltage
IGT
VGT
VD = 12V, RL = 33Ω, tp ≥ 20µs
Gate Non–Trigger Voltage
VGD
TJ = +125°C, VD = 800V, RL = 3.3kΩ
Holding Current
Min
Typ
Max Unit
–
–
80
mA
–
–
1.5
V
0.2
–
–
V
IH
IT = 0.5A, Gate Open
–
20
150
mA
Peak On–State Voltage
VTM
ITM = 100A, tp = 10ms
–
–
1.9
V
Forward Leakage Current
IDRM
VDRM = 800V
–
–
0.02
mA
–
–
6.0
mA
–
–
0.02
mA
TJ = +125°C
–
–
6.0
mA
TJ = +125°C
Reverse Leakage Current
IRRM
VDRM = 800V
Total Turn–On Time
tgt
IT = 80A, VD = 800V, IG = 200mA, diG/dt = 0.2A/µs
–
2
–
µs
Turn–Off Time
tq
TJ = +125°C, IT = 80A, VR = 75V, VD = 536V,
diR/dt = 30A/µs, dv/dt = 20V/µs, Gate Open
–
100
–
µs
500
–
–
V/µs
Critical Rate of Rise of
Off–State Voltage
dv/dt
TJ = +125°C, VDRM = 536V, Gate Open,
Linear Slope Up
.060 (1.52)
.600 (15.24)
.173 (4.4)
Isol
.156
(3.96)
Dia.
K
A
.550
(13.97)
.430
(10.92)
G
.500
(12.7)
Min
.055 (1.4)
.015 (0.39)
.215 (5.45)
NOTE: Dotted line indicates
that case may have square
corners.