Sensitive Gate Triacs

MAC4SM, MAC4SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of ac loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
• Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
• High Immunity to dv/dt — 50 V/ms Minimum at 125_C
• Commutating di/dt — 3.0 A/ms Minimum at 125_C
• Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
• On-State Current Rating of 4 Amperes RMS at 100_C
• High Surge Current Capability — 40 Amperes
• Blocking Voltage to 800 Volts
• Rugged, Economical TO220AB Package
• Operational in Three Quadrants: Q1, Q2, and Q3
• Device Marking: Logo, Device Type, e.g., MAC4SM, Date Code
http://onsemi.com
TRIACS
4 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Rating
Voltage(1)
Value
Unit
Peak Repetitive Off−State
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC4SM
MAC4SN
VDRM,
VRRM
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz,
TC = 100°C)
IT(RMS)
4.0
Amps
ITSM
40
Amps
I2t
6.6
A2sec
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration
(t = 8.33 ms)
Peak Gate Power
(Pulse Width ≤ 1.0 μs, TC = 100°C)
Average Gate Power
(t = 8.3 ms, TC = 100°C)
Operating Junction Temperature Range
Storage Temperature Range
Volts
1
600
800
PGM
0.5
Watt
PG(AV)
0.1
Watt
TJ
−40 to
+125
°C
Tstg
−40 to
+150
°C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
2
3
TO−220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC4SM
TO220AB
50 Units/Rail
MAC4SN
TO220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MAC4SM/D
MAC4SM, MAC4SN
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
RθJC
RθJA
2.2
62.5
°C/W
TL
260
°C
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
—
—
—
—
0.01
2.0
—
1.3
1.6
2.9
2.9
2.9
4.0
4.7
6.0
10
10
10
2.0
5.0
15
—
—
—
6.0
15
6.0
30
30
30
0.5
0.5
0.5
0.7
.65
0.7
1.3
1.3
1.3
(di/dt)c
3.0
4.0
—
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 0.67 x Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
dv/dt
50
150
—
V/μs
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 μsec; diG/dt = 200 mA/μsec; f = 60 Hz
di/dt
—
—
10
A/μs
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
mA
ON CHARACTERISTICS
Peak On-State Voltage(1)
(ITM = ± 6.0 A)
VTM
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±200 mA)
IH
Latching Current (VD = 12 V, IG = 10 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT
V
mA
mA
mA
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V/μs, Gate Open,
TJ = 125°C, f = 500 Hz, CL = 5.0 μF, LL = 20 mH, No Snubber)
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
http://onsemi.com
2
MAC4SM, MAC4SN
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
VTM
on state
IRRM at VRRM
IH
Quadrant 3
MainTerminal 2 −
IH
off state
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
Quadrant I
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
Quadrant III
(−) MT2
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
http://onsemi.com
3
Quadrant 1
MainTerminal 2 +
+ Voltage
IDRM at VDRM
MAC4SM, MAC4SN
1.0
Q3
10
VGT, GATE TRIGGER VOLTAGE (VOLTS)
IGT, GATE TRIGGER CURRENT (mA)
100
Q2
Q1
1
−40 −25 −10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
0.9
0.8
0.7
0.6
Q1
0.4
0.3
−40 −25 −10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
100
IH, HOLDING CURRENT (mA)
IL , LATCHING CURRENT (mA)
100
Q2
Q1
10
Q3
10
MT2 Positive
MT2 Negative
1
−40 −25 −10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
1
−40 −25 −10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Typical Holding Current
versus Junction Temperature
P(AV), AVERAGE POWER DISSIPATION (WATTS)
Figure 3. Typical Latching Current
versus Junction Temperature
TC , CASE TEMPERATURE (°C)
125
120
30°
115
60°
90°
120°
110
180°
105
Q3
Q2
0.5
DC
0
3.5
0.5
1
1.5
2
2.5
3
IT(RMS), RMS ON-STATE CURRENT (AMP)
4
6
DC
5
180°
120°
4
90°
60°
3
30°
2
1
0
0
Figure 5. Typical RMS Current Derating
1
2
3
IT(RMS), RMS ON-STATE CURRENT (AMP)
Figure 6. On-State Power Dissipation
http://onsemi.com
4
4
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
100
Typical @ TJ = 125°C
Maximum @ TJ = 125°C
10
1
0.1
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
MAC4SM, MAC4SN
1
0.1
0.01
0.1
1
10
100
t, TIME (ms)
1000
Figure 8. Typical Thermal Response
0
0.5
1
1.5
2
2.5
3
3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 7. Typical On-State Characteristics
http://onsemi.com
5
10000
MAC4SM, MAC4SN
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE Z
−T−
T
SEATING
PLANE
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 4:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MAC4SM/D