NTE617 Varactor Diode Description: The NTE617 is a dual voltage–variable capacitance diode designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning. This device is supplied in the popular TO92 type plastic package for high volume, economical requirements of consumer and industrial applications. Features: D High Figure of Merit: Q = 140 (Typ) @ VR = 3V, f = 100MHz D Guaranteed Capacitance Range: 34 – 39pF @ VR = 3V D Dual Diodes – Save Space and Reduce Cost D Monolithic Chip Provides Near Perfect Matching: Guaranteed ±1% (Max) Over Specified Tuning Range Absolute Maximum Ratings (Each Device): Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Electrical Characteristics (Each Device): (TA = +25°C unless otherwise specified) Parameter Reverse Breakdown Voltage Reverse Voltage Leakage Current Symbol BVR IR Test Conditions Min Typ Max Unit 32 – – V – – 50 nA TA = +60°C – – 500 nA IR = 10µA TA = +25°C VR = 30V Series Inductance LS f = 250MHz, Lead Length [ 1/16” – 6 – nH Case Capacitance CC f = 1MHz, Lead Length [ 1/16” – 0.18 – pF TCC VR = 4V, f = 1MHz – 280 Diode Capacitance CT VR = 3V, f = 1MHz 34 – 39 Figure of Merit Q VR = 3V, f = 100MHz, Note 1 100 – 140 Capacitance Ratio CR C3/C30, f = 1MHz 2.5 – 2.8 Diode Capactance Temperature Coefficient Note 1. Q = 1 2 π f CT RS 400 ppm/°C pF .196 (5.0) .519 (13.18) .025 (0.63) Typ A1 K A2 .051 (1.29) Typ .017 (0.43) .157 (4.0) .196 (5.0)Dia