NTE NTE907

NTE907
Integrated Circuit
Diode Array
Description:
The NTE907 consists of six ultra–fast, low capacitance diodes on a common monolithic substrate.
Five of the diodes are independently accessible, with the sixth sharing a common terminal with the
substrate. The NTE907 comes in a 12–Lead TO5 type package.
Features:
D Excellent Reverse Recovery Time: 1ns typ.
D Matched Monolithic Construction: VF matched within 5mV
D Low Diode Capacitance: CD = 0.65pF typical at VR = –2V
Applications:
D Balanced Modulators or Demodulators
D Ring Modulators
D High Speed Diode Gates
D Analog Switches
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Power Dissipation, PD
Any one diode unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Total for device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
For TA > 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate linearly 5.7mW/°C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Peak Inverse Voltage, PIV
D1 – D5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
D6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5V
Peak Diode–to–Substrate Voltage, VDI
for D1–D5 (Pin1, 4, 5, 8, or 12 to Pin10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V, –1V
DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Peak Recurrent Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak Forward Surge Current, IF (Surge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Lead Temperature, TL
(During soldering 1/16 ±1/32” (1.59 ± 0.79mm) from case for 10sec Max) . . . . . . . . . +265°C
Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified)
Parameter
Symbol
DC Forward Voltage Drop
VF
Test Conditions
Min
Typ
Max
Unit
IF = 50µA
–
0.65
0.69
V
IF =1 mA
–
0.73
0.78
IF = 3mA
–
0.76
0.80
IF = 10mA
–
0.81
0.90
DC Reverse Breakdown Voltage
V(BR)R
IR = –10µA
5
7
–
V
DC Reverse Breakdown Voltage
Between any Diode Unit and
Substrate
DC Reverse (Leakage) Current
V(BR)R
IR = –10µA
20
–
–
V
VR = –4V
–
0.016
100
nA
DC Reverse (Leakage) Current
IR
Between any Diode Unit and
Substrate
Magnitude of Diode Offset Voltage
|VF1–VF2|
(Difference in DC Forward Voltage
Drops of any Two Diode Units)
Temperature Coefficient of |VF1–VF2|
∆|VF1–VF2|
∆T
Temperature Coefficient of Forward
∆VF
∆T
Drop
DC Forward Voltage Drop for
VF
Anode–to–Substrate Diode (DS)
Reverse Recovery Time
trr
VR = –10V
–
0.022
100
nA
IF = 1mA
–
0.5
5
mV
IF = 1mA
–
1
–
µV/°C
IF = 1mA
–
–1.9
–
mV/°C
IF = 1mA
–
0.65
–
V
IF = 10mA, IR = 10mA
–
1
–
ns
Diode Resistance
RD
f = 1kHz, IF = 1mA
25
30
45
Ω
Diode Capacitance
CD
VR = –2V, IF = 0
–
0.65
–
pF
Diode–to–Substrate Capacitance
CD1
VD1 = +4V, IF = 0
–
3.2
–
pF
IR
Note 1. Characteristics apply for each diode unit, unless otherwise specified.
Pin Connection Diagram
(Top View)
Anode D1
8
Anode D6 9
Cathode D6/
Substrate & Case 10
67
Cathode D1
6 Cathode D2
5 Anode D2
Cathode D5 11
Anode D5
4 Anode D3
12
Anode D4 1
12
3 Cathode D3
Cathode D4
.370 (9.4) Dia Max
.335 (8.5) Dia Max
.180
(4.57)
Max
.500
(12.7)
Min
.018 (0.48) Dia Typ
.245 (6.23) Dia
4
3
5
2
6
7
1
8
12
11
10
9