NTE199 Silicon NPN Transistor Low Noise, High Gain Amplifier Description: The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector saturation voltage, tight beta control, and excellent low noise characteristics. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Steady State Collector Current (Note 1), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C Total Power Dissipation (TA = +55°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260mW Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Lead Temperature (During Soldering, 1/16” from case, 10sec max), TL . . . . . . . . . . . . . . . . . +260°C Note 1. Determined from power limitations due to saturation voltages at this current Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCB = 50V – – 30 nA VCB = 50V, TA = +100°C – – 10 µA Static Characteristics Collector Cutoff Current ICBO Collector Cutoff Current ICES VCB = 50V – – 30 nA Emitter Cutoff Current IEBO VEB = 5V – – 50 nA Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max 400 – 800 – 300 – Unit Static Characteristics (Cont’d) Forward Current Transfer Ratio hFE VCE = 5V, IC = 2mA VCE = 5V, IC = 100µA, Note 2 Breakdown Voltage Collector–to–Emitter V(BR)CEO IC = 10mA, Note 3 50 – – V Breakdown Voltage Collector–to–Base V(BR)CBO IC = 10µA 70 – – V Breakdown Voltage Emitter–to–Base V(BR)EBO IE = 10µA 5 – – V Collector Saturation Voltage VCE(sat) IC = 10mA, IB = 1mA, Note 3 – – 0.125 V Base Saturation Voltage VBE(sat) IC = 10mA, IB = 1mA, Note 3 – – 0.78 V Base Emitter ON Voltage VBE(on) VCE = 10V, IC = 2mA 0.5 – 0.9 V 400 – 1200 Dynamic Characteristics Forward Current Transfer Ratio hfe VCE = 5V, IC = 2mA, f = 1kHz Output Capacitance, Common Base Ccb VCB = 10V, IE = 0, f = 1kHz – – 4 pF Noise Figure NF IC = 100µA, VCE = 5V, Rg = 5kΩ, f = 1kHz – – 3 dB Note 2. Typically, a minimum of 95% of the distribution is above this value. Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max