NTE NTE7126

NTE7125 & NTE7126
Integrated Circuit
Switching Regulator
Description:
The NTE7125 and NTE7126 are integrated circuits in a 12–Lead SIP type package incorporating all
the power switching, amplifier, error detection, and overcurrent protection circuits required in a self–
extcitation type semi–regulated off–line switching regulator. As a result, these devices can be used
in the design of switching power supplies with a minimal number of external components. Furthermore, the adoption of MOSFET power switching elements supports a higher oscillation frequency
than possible with bi–polar transistors. This allows smaller pulse transformers and capacitors to be
used, making it possible to construct miniature power supply systems.
Features:
D Power MOSFET Devices
D Ideal for Semi–Regulated Control Switching Supplies
D Error Detection Circuit On–Chip (40.5V ±0.5V Set Refernce Voltage)
D Overcurrent Protection Circuit On–Chip
D Higher Oscillation Frequency allows the use of Smaller Pulse Transformers
D IMST Substrate acts as an Electromagnetic Shield, makinf Low–Noise Designs Possible
Applications:
D CRT/CTV Power Supplies
D Office Automation Equipment Power Supplies
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Operating Substrate Temperature (Recommended value is +105°C), TCmax . . . . . . . . . . . . +115°C
AC Input Voltage, VAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140Vrms
OPerating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10° to +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +115°C
Maximum Output Power (VO = 135V), WOmax
NTE7125 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110W
NTE7126 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145W
TR1
Drain Current, ID
NTE7125 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
NTE7126 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Pulse Drain Current, ID (pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Drain Reverse Current, IDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Gate–Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Absolute Maximum Ratings (Cont’d): (TA = +25°C unless otherwise specified)
TR1 (Cont’d)
Allowable Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78.1W
Chip Junction Temperature, TJmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Thermal Resistance, Junction–to–Case, RthJ–C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6°C/W
ZD1
Allowable Power Dissipation, PZD1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Chip Junction Temperature, TJ (ZD1)max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Thermal Resistance, Junction–to–Case, RthJ–C (ZD1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2°C/W
Allowable Operating Ranges: (TA = +25°C unless otherwise specified)
Pin4 Input Voltage, V4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±6 to ±24V
Oscillator Frequency, fOSC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 to 120kHz
Operating Characteristics: (TA = +25°C, TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Output Voltage Setting
IIN = 8mA
Output Voltage Temperature Coefficient
TC = 0° to +105°C, IIN = 8mA
Min
Typ
Max
Unit
40.0
40.5
41.0
V
–
7
–
mV/°
C
TR1
Drain–Source Breakdown Voltage
V(BR)DSS ID = 10mA, VGS = 0V
500
–
–
V
Gate–Source Cutoff Voltage
VGS(off)
ID = 1mA, VDS = 10V
2.0
–
3.0
V
ON Resistance
NTE7125
NTE7126
RDS(on)
ID = 2.5A, VGS = 10V
–
–
1.4
0.8
1.8
1.8
Ω
Ω
–
800
–
pF
23.7
–
26.3
V
Input Capacitance
Ciss
VDS = 10V, VGS = 0V, f = 1MHz
VZ
IZ = 5mA
ZD1
Zener Voltage
Pin Connection Diagram
(Front View)
12 TR1 Drain
11 TR1 Drain
10
9
8
7
6
5
4
3
2
1
No Pin
TR1 Source
TR1 Source
OCP Setting Level Input
Amplifier Circuit Control
TR1 Gate
Drive Voltage Input
GND
Error Detection Level
Vref (40.5V typ) Input
1.835 (46.6)
1.622 (41.2)
.335 (8.5)
1.004
(25.5)
.500
(12.7)
1
12
.100 (2.54)
1.100 (27.9)
.787
(20.0)
.261 (6.63)
.157
(4.0)