IRIS-A6372 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. Package Outline • Low start-up circuit current (50uA max) • Built-in Active Low-Pass Filter for stabilizing the operation in case of light load • Avalanche energy guaranteed MOSFET with high VDSS • The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. • No VDSS de-rating is required. • Built-in constant voltage drive circuit • Various kinds of protection functions 8 Lead PDIP • Pulse-by-pulse Overcurrent Protection (OCP) • Overvoltage Protection with latch mode (OVP) Key Specifications • Thermal Shutdown with latch mode (TSD) Type Descriptions IRIS-A6372 MOSFET VDSS(V) 900 RDS(ON) MAX 7.7Ω AC input(V) Pout(W) Note 1 230±15% 6 85 to 264 4 IRIS-A6372 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time). Typical Connection Diagram STR-A6372 1 8 2 7 3 6 4 5 www.irf.com IRIS-A6372 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol IDpeak Definition Drain Current *1 IDMAX Maximum switching current *5 EAS Vin Vth P D1 P D2 TF Top Tstg Tch Single pulse avalanche energy *2 Input voltage for control part O.C.P/F.B Pin voltage Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature Terminals Max. Ratings 8 1.18 Units A 8 1.18 A 8-1 3-2 4-2 8-1 24.9 35 6 1.35 mJ V V W 3-2 0.14 W - -20 ~ +125 -20 ~ +125 -40 ~ +125 150 ℃ ℃ ℃ ℃ Note Single Pulse V1-2=0.82V Ta=-20~+125℃ Single Pulse VDD=99V,L=20mH IL=1.18A *6 Specified by Vin×Iin Refer to recommended operating temperature *1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve Fig.1 V1-2 *4 Refer to TF-PD2 curve for Control IC (See page 5) *5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by V1-2 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current. *6 When embedding this hybrid IC onto the printed circuit board (board size 15mm×15mm) www.irf.com IRIS-A6372 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified) Symbol Vin(ON) Vin(OFF) Iin(ON) Iin(OFF) TOFF(MAX) Vth IOCP/FB Vin(OVP) Ratings TYP 17.6 10.1 15 0.76 0.8 25.5 MIN 15.8 9.1 12 0.7 0.7 23.2 Definition Operation start voltage Operation stop voltage *7 Circuit current in operation Circuit current in non-operation Maximum OFF time O.C.P/F.B Pin threshold voltage O.C.P/F.B Pin extraction current O.V.P operation voltage Units V V mA µA µsec V mA V MAX 19.4 11.1 5 50 18 0.82 0.9 27.8 Test Conditions Vin=0→19.4V Vin=19.4→9.1V Vin=15V Vin=0→27.8V Vin=27.8→ Iin(H) Latch circuit sustaining current *8 Vin(La.OFF) Latch circuit release voltage *7,8 Tj(TSD) Thermal shutdown operating temperature 7.9 135 - 70 10.5 - µA V ℃ (Vin(OFF)-0.3)V Vin=27.8→7.9V - *7 The relation of Vin(OFF)＞Vin(La.OFF) is applied for each product. *8 The latch circuit means a circuit operated O.V.P and T.S.D. Electrical Characteristics (for MOSFET) (Ta=25℃) unless otherwise specified Symbol Definition MIN Ratings TYP MAX Units Test Conditions 900 - - V V2- 1=0V(short) - - 300 µA V2- 1=0V(short) - - 7.7 250 Ω nsec ID=300µA VDSS Drain-to-Source breakdown voltage IDSS Drain leakage current VDS =900V V3- 2 =10V RDS(ON) On-resistance tf Switching time ID=0.4A Between channel and θch-F Thermal resistance *9 - - 52 ℃/W internal frame *9 Internal frame temperature (TF) is measured at the root of the Pin 5. www.irf.com IRIS-A6372 IRIS-A6372 IRIS-A6372 A.S.O. temperature derating coefficient curve MOSFET A.S.O. Curve 10 80 Drain current limit by ON resistance Drain CurrentD I[A] A.S.O. temperature derating coefficient[%] 100 60 40 1 1ms ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. 0.1 20 0 0 20 40 60 80 100 0.01 120 1 Internal frame temperature TF [℃] 10 100 D rain-to-Source V oltage V D S[V ] 1000 IRIS-A6372 Avalanche energy derating curve IRIS-A6372 Maximum Switching current derating curve Ta=‐20～+125℃ 1.4 100 EAS temperature derating coefficient[%] 1.2 Maximum Switchng Current IDMAX[A] 0.1ms 1.0 0.8 0.6 0.4 80 60 40 20 0.2 0 0.0 25 0.8 0.9 1.0 V1-2 [V] 1.1 1.2 50 75 100 125 150 Channel temperature Tch [℃] www.irf.com IRIS-A6372 IRIS-A6372 MIC TF-PD2 Curve IRIS-A6372 MOSFET Ta-PD1 Curve 0.16 1.6 PD2=0.14[W] PD1=1.35[W] 1.4 0.14 0.12 Power dissipation P D2[W] Power dissipation P D1[W] 1.2 1 0.8 0.6 0.10 0.08 0.06 0.4 0.04 0.2 0.02 0 0 20 40 60 80 100 120 140 0.00 160 0 Ambient temperature Ta[℃] 20 40 60 80 100 120 140 160 Internal frame temperature TF[℃] IRIS-A6372 Transient thermal resistance curve Transient thermal resistance θch-c[℃/W] 10 1 0.1 0.01 1µ 10µ 100µ 1m 10m 100m tim e t [sec] www.irf.com IRIS-A6372 Block Diagram 3 Vin OVP UVLO ＋ ＋ － REG － Latch Delay TSD Internal Bias ＋ － REG PWM OSC 7,8 D Latch Drive S Q R 1 S OCP Comp. 4 ＋ － Icont OCP/FB 2,5 GND Lead Assignments Pin No. Pin Assignment (Top View) Source 1 8 Drain GND 2 7 Drain Vin 3 6 N.C. OCP/FB 4 5 GND 1 2 3 Symbol S GND Vin 4 5 6 7 OCP/FB GND N.C. D Description Source Pin Ground Pin Power supply Pin Overcurrent / Feedback Pin Ground Pin Drain Pin Function MOSFET source Ground Input of power supply for control circuit Input of overcurrent detection signal / constant voltage control signal Ground Not Connected MOSFET drain Other Functions O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit www.irf.com IRIS-A6372 Case Outline 8 7 6 5 A6372 a b c IR 1 2 3 4 a. Type Number b. Lot Number 1st letter：The last digit of year 2nd letter：Month (1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec.) 3rd letter：Week 1～3 : Arabic numerals c. Registration Number Material of Pin : Cu Treatment of Pin : Solder plating Weight: Approx. 0.51g Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information. www.irf.com