Data Sheet No. PD 96946A IRIS-G6353 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. Package Outline • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. • Low start-up circuit current (50uA max) • Built-in Active Low-Pass Filter for stabilizing the operation in case of light load • Avalanche energy guaranteed MOSFET with high VDSS • The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. • No VDSS de-rating is required. • Built-in constant voltage drive circuit TO-220 Fullpack (5 Lead) •Various kinds of protection functions • Pulse-by-pulse Overcurrent Protection (OCP) • Overvoltage Protection with latch mode (OVP) Key Specifications Type MOSFET VDSS(V) RDS(ON) MAX • Thermal Shutdown with latch mode (TSD) IRIS-G6353 650 1.90Ω AC input(V) Pout(W) Note 1 230±15% 120 85 to 264 58 Note 1: The Pout (W) represents the thermal rating at PRC Operation, and the peak power output is obtained by approximately 120 to 140% of the above listed. When the output voltage is low and ON-duty is narrow, the Pout (W) shall become lower than that of above. Descriptions IRIS-G6353 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time). Typical Connection Diagram IRIS-G6300 OCP/FB Vin GND S D www.irf.com IRIS-G6353 Absolute Maximum Ratings (Ta=25ºC) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol IDpeak Definition Drain Current *1 IDMAX Maximum switching current *5 Terminals Max. Ratings 1-2 10 1-2 EAS Vin Vth Single pulse avalanche energy *2 Input voltage for control part O.C.P/F.B Pin voltage 1-2 4-3 5-3 P D1 Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature P D2 TF Top Tstg Tch Units A A 10 1-2 125 35 6 26 1.5 mJ V V W W 4-3 0.14 W -20 ~ +125 -20 ~ +125 -40 ~ +125 150 ℃ ℃ ℃ ℃ *1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve - Note Single Pulse V2-3=0.82V Ta=-20~+125℃ Single Pulse VDD=99V, L=20mH IL peak=3.2A With infintite heatsink Without heatsink Specified by Vin×Iin Refer to recommended operating temperature Fig.1 V2-3 *4 Refer to TF-PD2 curve for Control IC (See page 5) *5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and Pin 3 due to patterning, the maximum switching current decreases as shown by V2-3 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current. www.irf.com IRIS-G6353 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified) Symbol Vin(ON) Vin(OFF) Iin(ON) Iin(OFF) TOFF(MAX) Vth IOCP/FB Vin(OVP) Iin(H) Vin(La.OFF) Tj(TSD) Ratings TYP 17.6 10.1 15 0.76 0.8 25.5 - MIN 15.8 9.1 12 0.7 0.7 23.2 7.9 135 Definition Operation start voltage Operation stop voltage *6 Circuit current in operation Circuit current in non-operation Maximum OFF time O.C.P/F.B Pin threshold voltage O.C.P/F.B Pin extraction current O.V.P operation voltage Latch circuit sustaining current *7 Latch circuit release voltage *6,7 Thermal shutdown operating temperature MAX 19.4 11.1 5 50 18 0.82 0.9 27.8 70 10.5 - Units V V mA µA µsec V mA V µA V ℃ Test Conditions Vin=0→19.4V Vin=19.4→9.1V Vin=15V Vin=0→27.8V Vin=27.8→(Vin(OFF)-0.3)V Vin=27.8→7.9V - *6 The relation of VIN(OFF) >VIN(La.OFF) is applied for each product *7 The latch circuit means a circuit operated O.V.P and T.S.D. Electrical Characteristics (for MOSFET) (Ta=25℃) unless otherwise specified Symbol Definition MIN Ratings TYP MAX Units Test Conditions ID=300µA VDSS Drain-to-Source breakdown voltage IDSS Drain leakage current 650 - - V V3- 2 =0V(short) - - 300 µA V3-2=0V(short) - - 1.9 250 Ω nsec VDS =650V V3-2=10V RDS(ON) On-resistance tf Switching time ID=1.2A Between channel and θch-F Thermal resistance - - 2 ℃/W internal frame www.irf.com IRIS-G6353 IRIS-G6353 MOSFET A.S.O. Curve IRIS-G6353 A.S.O. temperature derating coefficient curve 80 Drain CurrentD ID [A] A.S.O. temperature derating coefficient[%] Single Pulse 100 100 Ta=25℃ 60 40 Drain current limit by ON resistance 10 1ms 1 0.1 20 0.1ms ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. 0 0 20 40 60 80 100 120 0.01 1 Internal frame temperature TF [℃] IRIS-G6353 IRIS-G6353 Avalanche energy derating curve Maximum Switching current derating curve T a=‐20 ～+125 ℃ 100 10.0 EAS temperature derating coefficient[%] DMAX [A] 12.0 Maximum Switchng Current I 10 100 1000 Drain-to-Source Voltage VDS [V] 8.0 6.0 4.0 2.0 80 60 40 20 0 0.0 0.8 0.9 1.0 V2-3 [V] 1.1 1.2 25 50 75 100 125 150 Channel temperature Tch [℃] www.irf.com IRIS-G6353 IRIS-G6353 MIC TF-PD2 Curve IRIS-G6353 MOSFET Ta-PD1 Curve 0.16 30 PD2=0.14[W] PD1=26[W] 0.14 25 Power dissipation PD2[W] Power dissipation P D1[W] 0.12 With infinite heatsink 20 15 10 0.08 0.06 0.04 Without heatsink 5 0.10 0.02 PD1=1.5[W] 0 0.00 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Internal frame temperature TF[℃] Ambient temperature Ta[℃] IRIS-G6353 Transient thermal resistance curve Transient thermal resistance θch-c[ ℃/W] 10 1 0.1 0.01 0.001 1µ 10µ 100µ 1m 10m 100m tim e t [sec] www.irf.com IRIS-G6353 Block Diagram 4 Vin OVP UVLO ＋ ＋ － REG － Latch Delay TSD Internal Bias ＋ － REG PWM OSC 1 D Latch Drive S Q R 2 S OCP Comp. ＋ － 5 OCP/FB Icont 3 GND Lead Assignments Pin No. IRIS 1 2 3 4 Symbol D S GND Vin Description Drain Pin Source Pin Ground Pin Power supply Pin 5 OCP/FB Overcurrent / Feedback Pin Function MOSFET drain MOSFET source Ground Input of power supply for control circuit Input of overcurrent detection signal / constant voltage control signal Other Functions O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit D S GND Vin OCP/FB www.irf.com IRIS-G6353 Case Outline 4.2 ±0.2 φ3.2 ±0.2 16.9 ±0.3 7.9 ±0.2 4 ±0.2 2.8 ±0.2 IRIS a b R-end (4.6) 0.94 ±0.15 2-(R1) +0.2 0.85 -0.1 8.7 ±0.5 4.1 ±0.5 2.6 ±0.1 +0.2 0.45 -0.1 5.08 ±0.6 4xp1.7±0.1=(6.8) 10 ±0.2 0.7 1 2 3 4 5 Material of Pin : Cu Treatment of Pin : Ni plating + solder dip 0.7 a：Type Number G6353 b：Lot Number 1st letter：The last digit of year 2nd letter：Month 1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec. 3rd & 4th letter：Day Arabic Numerals 5th letter : Registration Symbol Weight : Approx. 2.3g Dimensions in mm DWG.No.：TG3A-1128 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information. www.irf.com