Prod uct Bul le tin OP910 December 1998 PIN Silicon Photodiode Type OP910 *THIS DIMENSION CONTROLLED AT HOUSING SURFACE. DIMENSIONS ARE IN INCHES (MILLIMETERS). Features Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) • • • • Re verse Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Stor age Tem per ature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 o C to +150 o C Op er at ing Tem per ature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 o C to +125 o C Lead Sol der ing Tem per ature [1/16 inch (1.6 mm) from case for 5 sec . with sol der ing iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1) Power Dissaipa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Narrow receiving angle Fast switching time Linear response vs. irradiance Enhanced temperature range Description The OP910 consists of a PIN silicon photodiode mounted in a two-leaded hermetic TO-46 package. The narrow receiving angle has an acceptance half angle of ±12o. NOTES: (1) RMA Flux is rec om mended. Du ra tion can be ex tended to 10 sec. max. when flow sol der ing. (2) Light source is an un fil tered GaAIAs LED with a peak wave length of 885 nm and a radio met ric in ten sity level which var ies less than 10% over the en tire lens sur face of the pho to di ode being tested. (3) Junc tion tem pera ture main tained at 25o C. (4) To cal cu late typi cal dark cur rent in nA, use. The for mual ID = 10 (0.042 TAt-1.5) where TA is am bi ent tem pera ture in o C. (5) Der ate line arly 2.5 mw/o C above 25o C. Typi cal Per form ance Curves Typi cal Spec tral Re sponse Wave length - nm Optek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 3-70 (972)323- 2200 Fax (972)323-2396 Type OP910 o Elec tri cal Char ac ter is tics (TA = 25 C un less oth er wise noted) SYM BOL PARAMETER IL Light Current ID Dark Current V(BR)R MIN TYP MAX UNITS 10 13 1 Reverse Voltage Breakdown 10 100 TEST CON DI TIONS µA VR = 20 V, Ee = .50 mW/cm2 note 2,3 nA VR = 20 V, Ee = 0.0 V IR = 100 µA tr Rise Time 10 nS VR = 20 V, RL = 50 OHMS tf Fall Time 10 nS VR = 20 V, R L = 50 OHMS ∅ Half Angle +/- 12 degr. CP Capacitance 13 pF IF = Constant VR = 0 V, F = 1 Mhz, Ee = 0 Typi cal Per form ance Curves Normalized Light Current vs Reverse Voltage Total Capacitance vs Reverse Voltage TA = 25o C Ee = 0 mW/cm2 f = 1 MHz Normalized Light and Dark Current vs Ambient Temperature VR = 5 V λ = 935 nm Normalized to TA = 25o C Light Current TA = 25o C λ = 935 nm Dark Current TA - Ambient Temperature - o C VR - Reverse Voltage - V VR - Reverse Voltage - V Switching Time Test Circuit Light Current vs Irradiance E e - Irradiance - mW/cm2 Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323-2396 3-71