VISHAY BPW24

BPW24R
Vishay Telefunken
Silicon PIN Photodiode
Description
BPW24R is a high sensitive silicon planar photodiode
in a standard TO–18 hermetically sealed metal case
with a glass lens.
A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device
features a low capacitance and high speed even at low
supply voltages.
Features
D
D
D
D
D
D
D
D
D
Hermetically sealed TO–18 case
Exact central chip alignment
94 8642
Cathode connected to case
Angle of half sensitivity ϕ = ± 12°
Extra fast response times at low operating voltages
High photo sensitivity
Radiant sensitive area A=0.78 mm2
Suitable for visible and near infrared radiation
For photodiode and photovoltaic cell operation
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Document Number 81520
Rev. 2, 20-May-99
Test Conditions
Tamb
t
x 25 °C
x5s
Symbol
VR
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
60
210
125
–55...+125
–55...+125
260
350
Unit
V
mW
°C
°C
°C
°C
K/W
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BPW24R
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Open Circuit Voltage
Temp. Coefficient of Vo
Short Circuit Current
Temp. Coefficient of Ik
Reverse Light Current
Absolute Spectral Sensitivity
y
Test Conditions
IR = 100 mA, E = 0
VR = 50 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 5 V, f = 1 MHz, E = 0
VR = 20 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2, l = 950 nm
Ee = 1 mW/cm2, l = 950 nm
Ee = 1 mW/cm2, l = 950 nm
EA = 1 klx
Ee = 1 mW/cm2,
l = 950 nm, VR = 20 V
VR = 5 V, l = 870 nm
VR = 5 V, l = 900 nm
Symbol
V(BR)
Iro
CD
CD
CD
Vo
TKVo
Ik
TKIk
Ira
Min
60
45
s(l)
s(l)
ϕ
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Rise Time
VR = 20 V, RL = 50 W,
l = 820 nm
Fall Time
VR = 20 V, RL = 50 W,
l = 820 nm
Typ
200
2
11
3.8
2.5
450
–2
55
0.1
60
Max
10
Unit
V
nA
pF
pF
pF
mV
mV/K
mA
%/K
mA
tr
0.60
0.55
±12
900
600...1050
7
A/W
A/W
deg
nm
nm
ns
tf
7
ns
lp
l0.5
Typical Characteristics (Tamb = 25_C unless otherwise specified)
VR=50V
103
1.4
I ra rel – Relative Reverse Light Current
I ro – Reverse Dark Current ( nA )
104
102
101
l=950nm
1.0
0.8
100
0.6
20
94 8454
VR=5V
1.2
40
60
80
100
120
Tamb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
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0
94 8409
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
Document Number 81520
Rev. 2, 20-May-99
BPW24R
Vishay Telefunken
S ( l ) rel – Relative Spectral Sensitivity
Ira – Reverse Light Current ( m A )
1000
100
10
VR=10V
l=950nm
1
0.1
0.01
0.1
Ee – Irradiance ( mW / cm2 )
94 8455
0.6
0.4
0.2
550
750
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0°
100
S rel – Relative Sensitivity
1 mW/cm2
0.5 mW/cm2
l=950nm
0.2 mW/cm2
10
0.1 mW/cm2
0.05 mW/cm2
1150
950
l – Wavelength ( nm )
94 8458
Figure 3. Reverse Light Current vs. Irradiance
Ira – Reverse Light Current ( m A )
0.8
0
350
10
1
1.0
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
0.02 mW/cm2
80°
1
0.1
1
100
10
VR – Reverse Voltage ( V )
94 8456
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8459
Figure 4. Reverse Light Current vs. Reverse Voltage
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
CD – Diode Capacitance ( pF )
12
10
E=0
f=1MHz
8
6
4
2
0
0.1
94 8439
1
10
100
VR – Reverse Voltage ( V )
Figure 5. Diode Capacitance vs. Reverse Voltage
Document Number 81520
Rev. 2, 20-May-99
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BPW24R
Vishay Telefunken
Dimensions in mm
14487
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Document Number 81520
Rev. 2, 20-May-99
BPW24R
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81520
Rev. 2, 20-May-99
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