OPTEK OPB750T

Product Bulletin OPB750T
June 1996
Reflective Object Sensor
Type OPB750T
Features
• High contrast ratio, 1000 to 1
minimum
• Printed circuit board mount
• Low cost plastic housing
Description
The OPB750T reflective assembly
features a phototransistor output
designed to decrease low-level light gain
while not affecting the high-level light
gain. Available without mounting tabs as
OPB750N.
Available with 12", 26 AWG wire leads as
OPB750/OPB755 series. Photologic®
output sensors available in
OPB760/OPB770 series.
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . . -40o C to +85o C
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240o C(2)
Input Diode
Forward DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak Forward Current (1µs pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . 3.0 A
Reverse DC Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1)
Output Phototransistor
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Collector DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1)
Notes:
(1) Derate Linearly 1.67 mW/o C above 25o C.
(2) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
(3) All parameters tested using pulse technique.
(4) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in
chlorinated hydrocarbons and ketones.
(5) Photocurrent is measured using an Eastman Kodak Neutral White test card having a 90%
diffuse reflectance as a reflecting surface . Reference: Eastman Kodak, Catalog #1257795.
(6) IC(OFF) is the photocurrent measured with current to the input diode and a 5% reflecting
surface.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
11-44
(972) 323-2200
Fax (972) 323-2396
Type OPB750T
Electrical Characteristics (TA = 25o C unless otherwise noted)
SYMBOL
Input Diode
PARAMETER
MIN MAX UNITS
TEST CONDITIONS
VF
Forward Voltage
1.80
V
IF = 40 mA
IR
Reverse Current
100
µA
VR = 2.0 V
V
IC = 100 µA
Collector Dark Current
100
nA
VCE = 10 V, IF = 0, H = 0
Saturation Voltage
0.40
V
IC = 150 µA, IF = 30 mA, d = 0.22”
µA
µA
µA
VCE = 5 V, IF = 30 mA, d = 0.08”(5)
VCE = 5 V, IF = 30 mA, d = 0.15”(5)
VCE = 5 V, IF = 30 mA, d = 0.22”(5)
Output Phototransistor
V(BR)CEO
ICEO
Collector-Emitter Breakdown Voltage
30
Coupled
VCE(SAT)
On-State Collector Current
IC(ON)
500
375
250
Off-State Collector Current
IC(OFF)
250
nA
IF = 30 mA, VCE = 5 V(6),
d = 0.08”, 0.15”, 0.22”
Typical Performance Curves
Normalized Collector Current vs.
Object Distance
+2σ
Normalized to d = .150"
IF = 30 mA
VCE = 5.0 V
Normalized Ouput Current vs.
Forward Current
Normalized to IF = 30 mA
VCE = 5 V
Average
Average
-2σ
+2σ
-2σ
Distance to Reflective Surface - Inches
Forward Current - mA
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972) 323-2200
Fax (972) 323-2396
11-45