.050" NPN Phototransistors VTT1115, 16, 17 TO-46 Lensed Package PACKAGE DIMENSIONS inch (mm) CASE 3 PRODUCT DESCRIPTION TO-46 HERMETIC (LENSED) CHIP TYPE: 50T ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise noted) A large area high sensitivity NPN silicon phototransistor in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to the VTE11xx series of IREDs. Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -40°C to 110°C -40°C to 110°C 250 mW 3.12 mW/°C 200 mA 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92) Light Current Dark Current Collector Breakdown Emitter Breakdown Saturation Voltage Rise/Fall Time lC lCEO VBR(CEO) VBR(ECO) VCE(SAT) tR/tF H=0 lC = 100 µA H=0 lE = 100 µA H=0 lC = 1.0 mA H = 400 fc lC = 1.0 mA RL = 100 Ω Part Number mA Min. Max. H fc (mW/cm2) VCE = 5.0 V VTT1115 1.0 — VTT1116 2.0 VTT1117 4.0 Angular Response θ1/2 (nA) Max. VCE (Volts) Volts, Min. Volts, Min. Volts, Max. µsec, Typ. Typ. 20 (1) 100 10 30 6.0 0.40 5.0 ±15° — 20 (1) 100 10 30 4.0 0.40 8.0 ±15° — 20 (1) 100 10 30 4.0 0.40 8.0 ±15° Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 103