PERKINELMER VTT1225

.025" NPN Phototransistors
VTT1225, 26, 27
Clear T-1¾ (5 mm) Plastic Package
PACKAGE DIMENSIONS inch (mm)
CASE 26 T-1¾ (5 mm)
CHIP TYPE: 25T
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
A small area high speed NPN silicon phototransistor
mounted in a 5 mm diameter lensed, end looking,
transparent plastic package. Detectors in this series have
a half power acceptance angle (θ1/2) of 5°. These devices
are spectrally and mechanically matched to the VTE12xx
series of IREDs.
(@ 25°C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-40°C to 100°C
-40°C to 100°C
50 mW
0.71 mW/°C
25 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Light Current
Dark Current
Collector
Breakdown
Emitter
Breakdown
Saturation
Voltage
Rise/Fall Time
lC
lCEO
VBR(CEO)
VBR(ECO)
VCE(SAT)
tR/tF
H=0
lC = 100 µA
H=0
lE = 100 µA
H=0
lC = 1.0 mA
H = 400 fc
lC = 1.0 mA
RL = 100 Ω
Part Number
mA
Min.
Max.
H
fc (mW/cm2)
VCE = 5.0 V
4.0
—
VTT1226
7.5
VTT1227
12.0
VTT1225
Angular
Response
θ1/2
(nA)
Max.
VCE
(Volts)
Volts, Min.
Volts, Min.
Volts, Max.
µsec, Typ.
Typ.
100 (5)
100
10
30
5.0
0.25
1.5
±5°
—
100 (5)
100
10
30
5.0
0.25
3.0
±5°
—
100 (5)
100
10
30
5.0
0.25
4.0
±5°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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