.025" NPN Phototransistors VTT1225, 26, 27 Clear T-1¾ (5 mm) Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP TYPE: 25T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A small area high speed NPN silicon phototransistor mounted in a 5 mm diameter lensed, end looking, transparent plastic package. Detectors in this series have a half power acceptance angle (θ1/2) of 5°. These devices are spectrally and mechanically matched to the VTE12xx series of IREDs. (@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -40°C to 100°C -40°C to 100°C 50 mW 0.71 mW/°C 25 mA 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92) Light Current Dark Current Collector Breakdown Emitter Breakdown Saturation Voltage Rise/Fall Time lC lCEO VBR(CEO) VBR(ECO) VCE(SAT) tR/tF H=0 lC = 100 µA H=0 lE = 100 µA H=0 lC = 1.0 mA H = 400 fc lC = 1.0 mA RL = 100 Ω Part Number mA Min. Max. H fc (mW/cm2) VCE = 5.0 V 4.0 — VTT1226 7.5 VTT1227 12.0 VTT1225 Angular Response θ1/2 (nA) Max. VCE (Volts) Volts, Min. Volts, Min. Volts, Max. µsec, Typ. Typ. 100 (5) 100 10 30 5.0 0.25 1.5 ±5° — 100 (5) 100 10 30 5.0 0.25 3.0 ±5° — 100 (5) 100 10 30 5.0 0.25 4.0 ±5° Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 94