.025" NPN Phototransistors VTT3423LA, 4LA, 5LA IRT Long T-1 (3 mm) Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 50A LONG T-1 (3 mm) CHIP TYPE: 25T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A small area high speed NPN silicon phototransistor in a 3 mm diameter, lensed plastic package. The package material transmits infrared and blocks visible light. These devices are spectrally and mechanically matched to the VTE33xxLA series of IREDs. (@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -40°C to 100°C -40°C to 100°C 50 mW 0.71 mW/°C 25 mA 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92) Light Current Dark Current Collector Breakdown Emitter Breakdown Saturation Voltage Rise/Fall Time lC lCEO VBR(CEO) VBR(ECO) VCE(SAT) tR/tF H=0 lC = 100 µA H=0 lE = 100 µA H=0 lC = 1.0 mA H = 400 fc lC = 1.0 mA RL = 100 Ω Part Number mA Min. Max. H fc (mW/cm2) VCE = 5.0 V VTT3423LA 1.0 — VTT3424LA 2.0 VTT3425LA 3.0 Angular Response θ1/2 (nA) Max. VCE (Volts) Volts, Min. Volts, Min. Volts, Max. µsec, Typ. Typ. 20 (1) 100 10 30 5.0 0.25 3.0 ±10° — 20 (1) 100 10 30 5.0 0.25 4.0 ±10° — 20 (1) 100 10 30 5.0 0.25 5.0 ±10° Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 96