UOT MID

SIDE LOOK PACKAGE
NPN PHOTODETECTOR
MID-11422
Description
Package Dimensions
The MID-11422 is a NPN silicon phototransistor moun-
Unit : mm ( inches )
4.45±0.12
(.175±.005)
ted in a lensed ,water clear plastic and side looking
2.22
(.087)
package.
0.76
(.030)
1.22±0.07 (.048
±.003)
5.72±0.12
(.225±.005)
1.55±0.12 (.061
±.005)
12.70 MIN.
(.500)
Features
l
Wide range of collector current
l
Lensed for high sensitivity
l
Clear transparent package
l
Low cost plastic package
0.50 TYP.
(.020)
1.00 MIN.
(.040)
2.54
(.100)
E
C
Notes :
1. Tolerance is ± 0.25mm (.010") unless otherwise noted .
2. Protruded resin under flange is 1.5 mm (.059") max
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
o
@ TA=25 C
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
o
o
Operating Temperature Range
-55 C to +100 C
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260 C for 5 seconds
o
Unity Opto Technology Co., Ltd.
02/04/2002
MID-11422
Optical-Electrical Characteristics
@ TA=25oC
Parameter
Test Conditions
Symbol
Min.
Typ .
V(BR)CEO
30
V
V(BR)ECO
5
V
Collector-Emitter
Ie=0.1mA
Breakdown Voltage
Ee=0
Emitter-Collector
Ie=0.1mA
Breakdown Voltage
Ee=0
Collector-Emitter
Ic=0.5 mA
Saturation Voltage
Ee=0.1mW/cm2
Rise Time
VR =30V , 0=1KΩ
Tr
15
Fall Time
IC=1mA
Tf
15
Collector Dark
VCE=10V
Current
Ee=0mW/cm2
On State Collector
VCE=5V
Current
Ee=0.1mW/cm2
VCE(SAT)
100
10
1
0.1
0.01
0.001
40
80
120
TA - Ambient Temperature - oC
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
200
120
80
40
0
0
2
4
6
8
10
RL - Load Resistance - KΩ
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
Relative Sensitivity
nA
mA
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Vce =5
V
Ee =0.1 mW/cm2
@λ= 940 nm
-75
-25
25
75
125
TA - Ambient Temperature -oC
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
Vcc = 5 V
VRL= 1 V
F = 100 Hz
PW = 1 ms
160
µS
0.256
Relative Collector Current
Iceo-Collector Dark Current-µA
Tr Tf Rise and Fall Time - µS
1000
V
100
IC Normalized Collector Current
IC(ON)
Unit
0.4
ICEO
Typical Optical-Electrical Characteristic Curves
0
Max.
5
Vce = 5 V
4
3
2
1
0
0
1
2
3
4
5
2
6
Ee - Irradiance - mW/cm
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
0° 10° 20°
30°
40°
50°
60
70°
80
90°
1.0
0.9
0.8
0.5 0.3 0.1
0.2 0.4 0.6
FIG.5 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002