DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114TE PNP resistor-equipped transistor Preliminary specification Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 1998 Jul 23 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE FEATURES • Built-in bias resistor R1 (typ. 10 kΩ) • Simplification of circuit design • Reduces number of components and board space. 3 handbook, 4 columns 3 R1 1 APPLICATIONS 2 1 • Especially suitable for space reduction in interface and driver circuit applications 2 Top view MAM359 • Inverter circuit configurations without use of an external resistor. Fig.1 Simplified outline (SC-75) and symbol. DESCRIPTION PNP resistor-equipped transistor in an SC-75 plastic package. NPN complement: PDTC114TE. MARKING 1 PINNING 2 PIN DESCRIPTION 1 base/input 2 emitter/ground (+) 3 collector/output TYPE NUMBER 3 MARKING CODE PDTA114TE 11 MGA893 - 1 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT − − −50 V − − −100 mA VCEO collector-emitter voltage IO output current (DC) ICM peak collector current − − −100 mA Ptot total power dissipation Tamb ≤ 25 °C − − 150 mW hFE DC current gain IC = −1 mA; VCE = −5 V 200 − − R1 input resistor 7 10 13 1998 Jul 23 open base MIN. 2 kΩ Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −50 V VEBO emitter-base voltage open collector − −5 V IO output current (DC) − −100 mA ICM peak collector current − −100 mA Ptot total power dissipation − 150 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 833 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current ICEO collector cut-off current CONDITIONS IE = 0; VCB = −50 V MIN. − TYP. − MAX. −100 UNIT nA IB = 0; VCE = −30 V − − −1 µA IB = 0; VCE = −30 V; Tj = 150 °C − − −50 µA nA IEBO emitter cut-off current IC = 0; VEB = −5 V − − −100 IC = −5 V; IC = −1 mA hFE DC current gain 200 − − VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − − −150 mV R1 input resistor 7 10 13 kΩ Cc collector capacitance − 3 pF 1998 Jul 23 IE = ie = 0; VCB = −10 V; f = 1 MHz − 3 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE MBK784 MBK783 −1 600 handbook, halfpage handbook, halfpage hFE VCEsat (1) (V) 400 (1) −10−1 (2) 200 (2) (3) (3) 0 −10−1 −1 −10 IC (mA) −10−2 −10−1 −102 VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. 1998 Jul 23 4 −1 −10 IC (mA) −102 Collector-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 1998 Jul 23 REFERENCES IEC JEDEC EIAJ SC-75 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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