QJD0240002 Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Dual Power MOSFET Module 400 Amperes/200 Volts Description: Powerex Dual MOSFET Module is designed specially for customer applications. The module is isolated for easy mounting with other components on a common heatsink. Features: Typical RDS(on) = 0.0055Ω Extremely High dv/td Capability Fast Body-Drain Diode Isolated Baseplate for Easy Heat Sinking Low Thermal Impedance Isolated Material: DBC Alumina (4) STY100NS20FD Chips per MOSFET Switch Applications: High Current, High Speed Switching Motor Drive DC-AC Converter for Welding Equipment Switch Mode Power Supply Dim A B C D E F G H J Inches 4.25 2.44 1.14+0.04/-0.02 3.66±0.01 1.88±0.01 0.67 0.16 0.24 0.59 Preliminary Millimeters 108.0 62.0 29+1.0/-0.5 93.0±0.25 48.0±0.25 17.0 4.0 6.0 15.0 Dim K L M N P Q R S T Inches 0.55 0.87 0.33 0.10 0.85 0.98 0.11 0.25 Dia. 0.6 Page 1 Millimeters 14.0 22.0 8.5 2.5 21.5 25.0 2.8 6.5 Dia. 15.15 7/10/2002 QJD0240002 Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Dual Power MOSFET Module 400 Amperes/200 Volts Maximum Ratings, Tj=25°°C unless otherwise specified Ratings Symbol QJD0240002 Units Drain-source voltage, VGS=0V VDSS 200 Volts Gate-source voltage VGSS ±20 Volts Drain Current at Tc = 25°C ID 400 Amperes Drain Current at Tc = 100°C ID 252 Amperes Max Operating Junction Temperature Tj 150 °C Tstg -40 to 125 °C Mounting Torque, M6 Terminal Screws - 40 In-lb Mounting Torque, M6 Mounting Screws - 40 In-lb Module Weight (Typical) - 400 Grams VRMS 2000 Volts Storage Temperature V Isolation Static Electrical Characteristics, Tj=25°°C unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. Max. Units Drain-source breakdown voltage V(BR)DSS ID=1mA, VGS=0V 200 - - Volts Drain leakage current IDSS VDS=200V, VGS=0V - - 40 µA Drain leakage current at Tc = 125°C IDSS VDS=200V, VGS=0V - - 400 µA Gate leakage current IGSS VGS=±20V,VDS=0V - - ±400 nA Gate-source threshold voltage VGS(th) ID=1mA, VDS=10V 3.0 4.0 5.0 Volts Drain-source on state resistance RDS(ON) ID=200A, VGS=10V - 5.5 6.0 mΩ Drain-source on-state voltage VDS (ON) ID=200A, VGS=10V - 1.1 1.2 Volts VSD ISD=400A, VGS=0V - - 1.6 Volts Forward On Voltage MOS Diode Dynamic Electrical Characteristics, Tj=25°°C unless otherwise specified Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay time Rise Time Turn- off Delay Time Fall Time Symbol Test Conditions Min. Typ. Max. Units Ciss Coss Crss td(on) tr td(off) tf VDS=25V VGS=0V f=1MHz - 31600 6000 1840 TBD TBD TBD TBD - pF pF pF ns ns ns ns - 225 - ns - 5.4 - µC - 48 - Amperes Reverse Recovery Time MOS Diode trr Reverse Recovery Charge MOS Diode Qrr Reverse Recovery Current MOS Diode IRRM VDD=100V ID=200A VGS=10V RG=4.7Ω ISD=400A di/dt=400A/µs VDD=160V Tj=150°C Thermal Characteristics, Tj=25°°C unless otherwise specified Characteristic Thermal Resistance, Channel to Case Contact Thermal Resistance (Thermal Grease Applied) Preliminary Symbol Test Conditions Min. Typ. Max. Units Rθ(ch-c) Per Mosfet - 0.08 TBD °C/W RθCF Per Module - 0.020 - °C/W Page 2 7/10/2002