QJS0512001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com A F Single MOSFET Module 120 Amperes/500 Volts T (DEEP) D 6 7 N (3 TYP.) R 3 2 G H 5 1 M (2 TYP.) 4 E B K (3 TYP.) H S Q 0.11 x 0.03TAB C Description: Powerex Single MOSFET Module is designed specially for customer applications. The module is isolated for easy mounting with other components on a common heatsink. P J L 1 3 4 2 5 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J 01/10 Rev. 1 Inches 3.70 1.34 1.18 3.15 0.50 0.28 0.67 0.91 Millimeters 94.0 34.0 30.0 80.0 12.7 7.0 17.0 23.0 0.91 23.0 Dimensions K L M N P Q R S T Inches M6 Metric 0.31 0.256 Dia. 0.47 1.13 0.10 0.84 0.21 Millimeters M6 8.0 6.5 Dia. 12.0 28.7 2.5 21.3 5.3 0.24 6.1 Features: £ Typical RDS(on) = 0.022Ω £ High dv/dt Capabilities £ Two STY60NM50 Chips £ Isolated Mounting £ Isolation Material - DBC AIN £ Copper Baseplate 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJS0512001 Single MOSFET Module 120 Amperes/500 Volts Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol Drain-Source Voltage Drain-Gate Voltage QJS0512001 Units VDS 500 Volts VDGR 500 Volts VGS ±30 Volts Drain Current (Continuous) at TC = 25°C ID 120 Amperes Drain Current (Continuous) at TC = 100°C ID 75 Amperes Junction Temperature Tj -40 to 150 °C Storage Temperature Gate-Source Voltage Tstg -40 to 125 °C Mounting Torque, M6 Terminal Screws — 26 in-lb Mounting Torque, M6 Mounting Screws — 26 in-lb Module Weight (Typical) — 220 Grams VRMS 2500 Volts V Isolation Voltage Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage V(BR)DSS ID = 500μA, VGS = 0 500 — — Volts Zero Gate Voltage Drain Current IDSS VGS = 0, VDS = 500V — — 20 μA Zero Gate Voltage Drain Current IDSS VGS = 0, VDS = 500V, TC = 125°C — — 200 μA Gate Leakage Current IGSS VDS = 0, VGS = ±20V — — ±20 μA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 500µA 3.0 4.0 5.0 Volts Drain-Source On Resistance RDS(on) ID = 60A, VGS = 10V — 0.022 0.025 Ω Total Gate Charge QG VDD = 400V, ID = 120A, VGS = 10V — 380 530 nC Forward On Voltage Source-Drain Diode VSD ISD = 120A, VGS = 0 — — 1.5 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) MOSFET — 0.1 TBD °C/W Contact Thermal Resistance, Rth(c-f) Module — — 0.075 °C/W Thermal Grease Applied 2 01/10 Rev. 1