EFM201 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION EFM206 SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 2.0 Amperes FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.098 gram DO-214AA MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 0.083 (2.11) 0.077 (1.96) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.008 (0.203) 0.004 (0.102) o Ratings at 25 C ambient temperature unless otherwise specified. 0.220 (5.59) 0.205 (5.21) Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) SYMBOL EFM201 EFM202 EFM203 EFM204 EFM205 EFM206 UNITS Maximum Recurrent Peak Reverse Voltage RATINGS VRRM 50 100 150 200 300 400 Volts Maximum RMS Volts VRMS 35 70 105 140 210 280 Volts VDC 50 100 150 200 300 400 Volts Maximum DC Blocking Voltage Maximum Average Forward Current at T A = 55 oC IO Peak Forward Surge Current I FM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) 2.0 75 I FSM CJ Operating and Storage Temperature Range Amps 30 T J , T STG Amps 20 pF 0 -65 to + 175 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 2.0A DC SYMBOL VF Maximum DC Reverse Current @T A = 25 o C at Rated DC Blocking Voltage @T A =150 o C Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. IR EFM201 EFM202 EFM203 0.95 EFM204 EFM205 EFM206 1.25 UNITS Volts 5.0 uAmps 50 trr 35 nSec 2001-5 AVERAGE FORWARD CURENT, (A) RATING AND CHARACTERISTIC CURVES ( EFM201 THRU EFM206 ) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr +0.5A (-) (+) -1.0A 1cm NOTES:1 Rise Time = 7ns max. Input Impedance = TJ = 100 1.0 TJ = 25 4 20 ~E FM 01 1.0 M2 TJ = 150 10 10 EF 100 TJ = 25 .1 Pulse Width = 300uS 1% Duty Cycle .01 .001 .01 0 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, (A) 0 25 50 75 100 125 150175 AMBIENT TEMPERATURE ( FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS .1 0 SET TIME BASE FOR 10 ns/cm 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. Single Phase Half Wave 60Hz Resistive or Inductive Load 1.0 20 6 OSCILLOSCOPE (NOTE 1) -0.25A 2.0 EF M 1 NONINDUCTIVE 0 5~ 25 Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 3.0 20 D.U.T (+) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE M 10 NONINDUCTIVE EF 50 NONINDUCTIVE FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 90 8.3ms Single Half Sine-Wave (JEDEC Method) 75 60 45 30 15 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz FIG. 6 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, (pF) 105 100 .2 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) 200 100 60 40 EFM 20 201 ~EF EFM 10 6 4 M2 205 ~EF TJ = 25 04 M2 06 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) RECTRON )