RF2310 4 WIDEBAND GENERAL PURPOSE AMPLIFIER Typical Applications • General Purpose High Bandwidth Gain Blocks • Broadband Test Equipment • Final PA for Medium Power Applications • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers Product Description 0.018 0.014 0.196 0.189 0.050 0.157 0.150 0.034 0.016 Optimum Technology Matching® Applied Si Bi-CMOS ü GaAs MESFET SiGe HBT Si CMOS Dimensions in mm 0.244 0.229 8° MAX 0° MIN GaAs HBT GENERAL PURPOSE AMPLIFIERS The RF2310 is a general purpose, low-cost, high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 2500MHz. The gain flatness over a very wide bandwidth makes the device suitable for many applications. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified. Si BJT 4 -A0.008 0.004 0.009 0.007 0.068 0.053 NOTES: 1. Shaded lead is Pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity 0.005 with respect to datum "A". Package Style: SOIC-8 Features • DC to well over 2500MHz Operation • Internally Matched Input and Output • 15dB Small Signal Gain VCC 1 8 RF OUT • 5dB Noise Figure GND 2 7 GND • +19dBm Output Power GND 3 6 GND • Single 3.5V to 6V Positive Power Supply RF IN 4 5 GND Ordering Information RF2310 RF2310 PCBA Functional Block Diagram Rev C5 010717 Wideband General Purpose Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 4-75 RF2310 Absolute Maximum Ratings Parameter Rating Unit Supply Voltage -0.5 to +6.0 VDC Input RF Power +10 dBm Storage Temperature -40 to +150 °C Junction Temperature 175 °C Thermal Resistance, Junction to 179 °C/W Case Notes: case reference: pins 5-7, conditions: no signal in and both RF ports terminated in 50Ω; average junction temperature measured at 85°C ambient: 143°C GENERAL PURPOSE AMPLIFIERS 4 Parameter Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit Condition Operating Range Overall Frequency Range Supply Voltage Operating Current (ICC) Operating Ambient Temperature 100 3.5 40 -40 20 50 2500 6.0 25 65 +85 MHz V mA mA °C VCC =3.6V, Temp=27°C VCC =5V, Temp=27°C 3.6V Performance Gain Gain Noise Figure Output IP3 OP1dB Gain Noise Figure Output IP3 OP1dB Gain Noise Figure Output IP3 OP1dB 16.2 15.3 2.5 +22.0 +10 15 2.7 +23.0 +10 16 2.4 +21.0 +10 dB dB dB dBm dBm dB dB dBm dBm dB dB dBm dBm 17 16.5 3 +31.0 +17 15.6 3.5 +33.0 +18 15 2.8 +26.0 +17 dB dB dB dBm dBm dB dB dBm dBm dB dB dBm dBm Freq=300MHz, VCC =3.6V, Temp=27°C Freq=900MHz, VCC =3.6V, Temp=27°C Freq=1950MHz, VCC =3.6V, Temp=27°C Freq=2450MHz, VCC =3.6V, Temp=27°C 5V Performance Gain Gain Noise Figure Output IP3 OP1dB Gain Noise Figure Output IP3 OP1dB Gain Noise Figure Output IP3 OP1dB 4-76 14.0 +28.0 Freq=300MHz, VCC =5V, Temp=27°C Freq=900MHz, VCC =5V, Temp=27°C Freq=1950MHz, VCC =5V, Temp=27°C Freq=2450MHz, VCC =5V, Temp=27°C Rev C5 010717 RF2310 Function VCC 2 GND 3 4 GND RF IN 5 6 7 8 GND GND GND RF OUT Description Interface Schematic Power supply pin. An external bypass capacitor is recommended. The total supply current is shared between this pin and pin 8 (through the inductor). VCC Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. To achieve the performance as specified, and to minimize instability, it is recommended to have a local ground plane under the device, as shown in the evaluation board layout. Same as pin 2. RF input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC-coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. 4 Bias GENERAL PURPOSE AMPLIFIERS Pin 1 RF IN Same as pin 2. Same as pin 2. Same as pin 2. RF output and bias pin. Biasing is accomplished with an external choke inductor to VCC that provides high impedance at the operating frequency. Because DC is present on this pin, a DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. RF OUT Application Schematic VCC = 5V 100 nF 22 pF 100 nH 1 RF OUT 8 22 pF 2 7 3 6 4 5 22 pF RF IN Rev C5 010717 4-77 RF2310 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) C4 100 pF C5 330 pF C6 1 µF L1 200 nH P1-1 VCC C2 1 nF GENERAL PURPOSE AMPLIFIERS 4 J1 SMA 1 8 2 7 3 6 4 5 OUT 50 Ω µstrip 50 Ω µstrip J2 SMA P1 H3M IN P1-1 C1 330 pF 2310400A 4-78 C3 1 nF P1-3 VCC P1-3 1 PC 2 GND 3 VCC Rev C5 010717 RF2310 Evaluation Board Layout Board Size 2.02” x 2.02” Board Thickness 0.031”, Board Material FR-4 GENERAL PURPOSE AMPLIFIERS 4 Rev C5 010717 4-79 RF2310 0.8 2.0 2.0 0. 4 0 3. 4.0 5.0 0.2 10.0 2 GHz 4.0 5.0 0.8 0.6 0.4 0.2 0 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10.0 2.5 GHz 3.0 0.2 10.0 2.0 4.0 5.0 1.0 0. 4 0 3. 2.5 GHz Swp Max 3.005GHz 0.6 0.8 0.6 Swp Max 3.005GHz 1.0 S11 Vcc=5V VCC = 5V S11 1.0 S11 S11 Vcc=3V VCC = 3V 2 GHz 1 GHz 80 MHz 1 GHz 100 MHz -10.0 4 .0 -2 1.0 0.8 Swp Max 3.005GHz 2.0 0.6 2.0 0. 4 4.0 5.0 0.2 0.2 10.0 2.0 -10.0 2 GHz Swp Min 0.01GHz .0 -2 -1.0 -0. 6 .4 -0 -0.8 -3 .0 .0 -2 .0 -4. 0 -5.0 -1.0 2.5 GHz 50 MHz -0.2 -4. 0 -5.0 .4 -0 -0.8 1.0 200 MHz 2 GHz -0.2 -0. 6 0.8 0.6 0.4 0.2 1.6 GHz 100 MHz 10.0 1 GHz 0 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 1 GHz 10.0 4.0 5.0 0 3. 4.0 5.0 0. 4 0 3. 3.0 0.6 Swp Max 3.005GHz -3 0.8 -1.0 -0. 6 -1.0 S22 V S22 Vcc=5V CC = 5V 1.0 S22 V S22 Vcc=3V CC = 3V Swp Min 0.01GHz -10.0 -0.8 Swp Min 0.01GHz -0.8 .0 .0 -2 -3 -0. 6 .0 .4 -0 -3 -4. 0 -5.0 .4 -0 -0.2 -4. 0 -5.0 GENERAL PURPOSE AMPLIFIERS -10.0 -0.2 Swp Min 0.01GHz S-Parameter Conditions: All plots are taken at ambient temperature=25°C. NOTE: All S11 and S22 plots shown were taken from an RF2310 evaluation board with external input and output tuning components removed and the reference points at the RF IN and RF OUT pins. 4-80 Rev C5 010717 RF2310 Gain versus Temperature OIP3 versus Temperature Frequency = 900 MHz Frequency = 900 MHz 17.2 36.0 Vcc=3V 17.0 34.0 16.8 32.0 16.6 30.0 OIP3 (dBm) Gain (dB) Vcc=5V 16.4 16.2 28.0 26.0 16.0 24.0 15.8 22.0 4 15.6 20.0 15.4 -60.0 18.0 -60.0 GENERAL PURPOSE AMPLIFIERS Vcc=3V Vcc=5V -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 -40.0 -20.0 Temperature (°C) 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) OP1dB versus Temperature ICC versus Temperature Frequency = 900 MHz 19.0 Frequency = 900 MHz 67.0 17.0 57.0 15.0 13.0 ICC (mA) OP1dB (dBm) 47.0 11.0 37.0 27.0 9.0 17.0 Vcc=3V 7.0 Vcc=3V Vcc=5V Vcc=5V 5.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 7.0 -60.0 100.0 -40.0 -20.0 Temperature (°C) 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) Gain versus Temperature OIP3 versus Temperature Frequency = 1950 MHz Frequency = 1950 MHz 16.2 36.0 Vcc=3V 34.0 16.0 Vcc=5V 32.0 15.8 30.0 OIP3 (dBm) Gain (dB) 15.6 15.4 28.0 26.0 15.2 24.0 15.0 22.0 Vcc=3V 14.8 20.0 14.6 -60.0 18.0 -60.0 Vcc=5V -40.0 -20.0 0.0 20.0 40.0 Temperature (°C) Rev C5 010717 60.0 80.0 100.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) 4-81 RF2310 OP1dB versus Temperature ICC versus Temperature Frequency = 1950 MHz 21.0 Frequency = 1950 MHz 68.0 19.0 58.0 17.0 ICC (mA) OP1dB (dBm) 48.0 15.0 13.0 38.0 11.0 28.0 4 9.0 GENERAL PURPOSE AMPLIFIERS Vcc=3V 18.0 Vcc=3V 7.0 Vcc=5V 5.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 Vcc=5V 8.0 -60.0 100.0 -40.0 -20.0 Temperature (°C) 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) Gain versus Temperature OIP3 versus Temperature Frequency = 2450 MHz Frequency = 2450 MHz 31.0 16.0 15.5 29.0 15.0 27.0 OIP3 (dBm) Gain (dB) 14.5 14.0 25.0 23.0 13.5 21.0 13.0 Vcc=3V Vcc=3V 19.0 12.5 Vcc=5V 12.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 Vcc=5V 17.0 -60.0 100.0 -40.0 -20.0 Temperature (°C) 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) OP1dB versus Temperature ICC versus Temperature Frequency = 2450 MHz 19.0 Frequency = 2450 MHz 67.0 17.0 57.0 15.0 13.0 ICC (mA) OP1dB (dBm) 47.0 11.0 37.0 27.0 9.0 Vcc=3V 17.0 Vcc=3V 7.0 Vcc=5V Vcc=5V 5.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 Temperature (°C) 4-82 60.0 80.0 100.0 7.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) Rev C5 010717 RF2310 S11 of Evaluation Board versus Frequency S22 of Evaluation Board versus Frequency Temperature = +25°C Temperature = +25°C 1.9 5.0 1.8 4.5 1.7 4.0 Output VSWR Input VSWR 1.6 1.5 1.4 3.5 3.0 2.5 1.3 4 2.0 Vcc=3V 1.1 Vcc=3.0V 1.5 Vcc=5.0V Vcc=5V 1.0 GENERAL PURPOSE AMPLIFIERS 1.2 1.0 0.0 500.0 1000.0 1500.0 2000.0 2500.0 Frequency (MHz) 0.0 500.0 1000.0 1500.0 2000.0 2500.0 Frequency (MHz) Reverse Isolation (S12) of Evaluation Board versus Frequency, Temperature = +25°C -19.5 Vcc=3.0V -20.0 Vcc=5.0V Reverse Isolation (dB) -20.5 -21.0 -21.5 -22.0 -22.5 -23.0 -23.5 -24.0 0.0 500.0 1000.0 1500.0 2000.0 2500.0 Frequency (MHz) Rev C5 010717 4-83 GENERAL PURPOSE AMPLIFIERS RF2310 4 4-84 Rev C5 010717