RFMD RF2335

RF2335
4
GENERAL PURPOSE AMPLIFIER
Typical Applications
• Broadband, Low Noise Gain Blocks
• Final PA for Low Power Applications
• IF or RF Buffer Amplifiers
• Broadband Test Equipment
• Driver Stage for Power Amplifiers
Product Description
4
Optimum Technology Matching® Applied
!
Si BJT
Si Bi-CMOS
GaAs HBT
GaAs MESFET
SiGe HBT
Si CMOS
0.15
0.05
GENERAL PURPOSE
AMPLIFIERS
The RF2335 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. The RF2335 is available in a very small industry-standard SOT23 5-lead surface mount package, enabling compact designs which
conserve board space.
1.60
+ 0.01
0.400
1
2.90
+ 0.10
0.950
2.80
+ 0.20
3° MAX
0° MIN
1.44
1.04
Dimensions in mm.
0.127
0.45
+ 0.10
Package Style: SOT 5 Lead
Features
• DC to 6000MHz Operation
• Internally matched Input and Output
• 12dB Small Signal Gain
• +33dBm Output IP3
• +17dBm Output Power
GND 1
5 RF OUT
• Good Gain Flatness
GND 2
RF IN 3
4 GND
Ordering Information
RF2335
RF2335 PCBA
Functional Block Diagram
Rev A4 001201
General Purpose Amplifier
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4-147
RF2335
Absolute Maximum Ratings
Parameter
Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
Parameter
Rating
Unit
120
+20
-40 to +70
-60 to +150
mA
dBm
°C
°C
Specification
Min.
Typ.
Max.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit
Overall
GENERAL PURPOSE
AMPLIFIERS
4
Frequency Range
3dB Bandwidth
Gain
Gain Flatness
Noise Figure
Input VSWR
Output VSWR
Output IP3
Output P1dB
Reverse Isolation
T=25°C, ICC =65mA
DC to 6000
3
13.7
13.1
12.4
11
10.6
10
9.8
±1
5.6
1.8:1
1.7:1
+33
+17.3
17.2
MHz
GHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dB
5.0
65
V
mA
Power Supply
Device Operating Voltage
Operating Current
4-148
Condition
Freq=100MHz
Freq=1000MHz
Freq=2000MHz
Freq=3000MHz
Freq=4000MHz
Freq=5000MHz
Freq=6000MHz
100MHz to 2000MHz
Freq=1000MHz
In a 50Ω system, DC to 2000MHz
In a 50Ω system, DC to 2000MHz
Freq=1000MHz±50kHz, PTONE =-10dBm
Freq=1000MHz
Freq=2000MHz
With 22Ω bias resistor
At pin 5 with ICC =65mA
Rev A4 001201
RF2335
Function
GND
2
3
GND
RF IN
4
5
GND
RF OUT
Description
Interface Schematic
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance.
Same as pin 1.
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instability.
Same as pin 1.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is determined by the following equation:
( V SUPPLY – V DEVICE )
R = ------------------------------------------------------I CC
RF OUT
4
GENERAL PURPOSE
AMPLIFIERS
Pin
1
RF IN
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds 120 mA over the planned operating temperature. This means that a resistor between the supply and
this pin is always required, even if a supply near 5.0V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
VCC
P1-1
P1
P1-1
1
VCC
2
GND
3
NC
R1
22 Ω
L1
100 nH
1
J1
RF IN
50 Ω µstrip
C1
100 pF
5
C2
100 pF
2
3
C3
100 pF
C4
1 µF
50 Ω µstrip
J2
RF OUT
4
233X410-
Rev A4 001201
4-149
RF2335
Evaluation Board Layout
Board Size 1” x 1”
GENERAL PURPOSE
AMPLIFIERS
4
4-150
Rev A4 001201