RF2334 4 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description 4 Optimum Technology Matching® Applied ! Si BJT Si Bi-CMOS GaAs HBT GaAs MESFET SiGe HBT Si CMOS 0.15 0.05 GENERAL PURPOSE AMPLIFIERS The RF2334 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 4000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified. The RF2334 is available in a very small industry-standard SOT23 5-lead surface mount package, enabling compact designs which conserve board space. 1.60 + 0.01 0.400 1 2.90 + 0.10 0.950 2.80 + 0.20 3° MAX 0° MIN 1.44 1.04 Dimensions in mm. 0.127 0.45 + 0.10 Package Style: SOT 5 Lead Features • DC to 4000MHz Operation • Internally matched Input and Output • 16dB Small Signal Gain • 5dB Noise Figure • 50mW Linear Output Power GND 1 5 RF OUT • Single Positive Power Supply GND 2 RF IN 3 4 GND Ordering Information RF2334 RF2334 PCBA Functional Block Diagram Rev A4 001201 General Purpose Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 4-143 RF2334 Absolute Maximum Ratings Parameter Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Parameter Rating Unit 120 +13 -40 to +75 -60 to +150 mA dBm °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit Overall GENERAL PURPOSE AMPLIFIERS 4 Frequency Range 3dB Bandwidth Gain Gain Flatness Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reverse Isolation T=25°C, ICC =65mA DC to 4000 2.5 19.4 18 16 14 13 ±2 4.8 2.1:1 1.8:1 +33 +18.5 20.5 MHz GHz dB dB dB dB dBm dBm dB 4.8 65 V mA dB dB Power Supply Device Operating Voltage Operating Current 4-144 Condition Freq=100MHz Freq=1000MHz Freq=2000MHz Freq=3000MHz Freq=4000MHz 100MHz to 2000MHz Freq=2000MHz In a 50Ω system, DC to 4000MHz In a 50Ω system, DC to 4000MHz Freq=1000MHz±50kHz, PTONE =-10dBm Freq=1000MHz Freq=2000MHz With 22Ω bias resistor At pin 5 with ICC =65mA Rev A4 001201 RF2334 Function GND 2 3 GND RF IN 4 5 GND RF OUT Description Interface Schematic Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Same as pin 1. RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Same as pin 1. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: ( V SUPPLY – V DEVICE ) R = ------------------------------------------------------I CC RF OUT 4 GENERAL PURPOSE AMPLIFIERS Pin 1 RF IN Care should also be taken in the resistor selection to ensure that the current into the part never exceeds 120 mA over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 4.9V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) VCC P1-1 P1 P1-1 1 VCC 2 GND 3 NC R1 22 Ω L1 100 nH 1 J1 RF IN 50 Ω µstrip C1 100 pF 5 C2 100 pF 2 3 C3 100 pF C4 1 µF 50 Ω µstrip J2 RF OUT 4 233X410- Rev A4 001201 4-145 RF2334 Evaluation Board Layout Board Size 1” x 1” GENERAL PURPOSE AMPLIFIERS 4 4-146 Rev A4 001201