SANKEN SLA5008

SLA5008
N-channel + P-channel
H-bridge
External dimensions A
Absolute maximum ratings
(Ta=25°C)
Ratings
Symbol
N channel
P channel
Unit
VDSS
100
–100
V
VGSS
±20
20
V
ID
±4
3
A
ID(pulse)
±8 (PW≤1ms)
6 (PW≤1ms)
A
EAS*
15
—
mJ
5 (Ta=25°C, with all circuits operating, without heatsink)
PT
•••
W
35 (Tc=25°C,with all circuits operating, with infinite heatsink)
W
θ j-c
3.57
°C/W
VISO
1000 (Between fin and lead pin, AC)
Vrms
Tch
150
°C
Tstg
–40 to +150
°C
* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
10
7
Pch 12
8
9
4
11
2
Nch
5
1
6
3
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch
P-ch
N-ch
7
6
C
5°
12
6
–7V
7V
---4
5
4
6V
3
---3
ID (A)
ID (A)
5
ID (A)
25°C
---5
TC=–
7
40°C
–10V
10V
–6V
VGS=–5V
VGS=5V
0
2
---1
1
10
1
---0
20
4
3
---2
2
0
(VDS=10V)
8
---6
8
0
---5
---10
VDS (V)
---15
0
---20
0
2
4
VDS (V)
6
8
10
VGS (V)
RDS(ON)-ID Characteristics (Typical)
N-ch
P-ch
(VGS=10V)
0.8
P-ch
(VGS=–10V)
(VDS=–10V)
---6
TC=–
---5
0.6
(ON)
ID (A)
(Ω)
(Ω)
(ON)
RDS
RDS
5°
C
12
---4
1.0
0.4
25°
40°C
C
1.5
0.5
---3
---2
0.2
---1
0
0
1
2
3
4
5
6
7
0
8
0
–1
–2
ID (A)
–3
–4
–5
–6
ID (A)
1.2
ID=4A
VGS=10V
P-ch
2.0
ID=–3A
VGS=–10V
1.0
1.5
(ON)
0.6
1.0
RDS
RDS
(ON)
(Ω)
(Ω)
0.8
0.4
0.5
0.2
0
--- 40
0
50
TC (°C)
42
100
150
0
–40
0
50
TC (°C)
0
---2
---4
---6
VGS (V)
RDS(ON)-TC Characteristics (Typical)
N-ch
---0
100
150
---8
---10
SLA
SLA5008
Electrical characteristics
(Ta=25°C)
N channel
Symbol
Specifications
min
V(BR)DSS
typ
max
100
P channel
Specifications
Unit
Conditions
V
ID=250µA, VGS=0V
min
±500
nA
VGS=±20V
IDSS
250
µA
VDS=100V, VGS=0V
4.0
V
VDS=10V, ID=250µA
–2.0
S
VDS=10V, ID=4A
0.7
VTH
2.0
1.1
1.7
max
Unit
Conditions
V
ID=–250µA, VGS=0V
–100
IGSS
Re(yfs)
typ
500
nA
VGS= 20V
–250
µA
VDS=–100V, VGS=0V
V
VDS=–10V, ID=–250µA
S
VDS=–10V, ID=–3A
–4.0
1.1
RDS(ON)
0.50
Ω
VGS=10V, ID=4A
1.1
Ω
VGS=–10V, ID=–3A
Ciss
180
pF
VDS=25V, f=1.0MHz,
180
pF
VDS=–25V, f=1.0MHz,
Coss
82
pF
VGS=0V
85
pF
VGS=0V
ton
40
ns
ID=4A, VDD 50V, VGS=–10V,
90
ns
ID=–3A, VDD –50V, VGS=–10V,
ns
see Fig. 3 on page 16.
80
ns
see Fig. 4 on page 16.
V
ISD=4A
–4.0
V
ISD=–3A
ns
ISD=±100mA
250
ns
ISD= 100mA
toff
40
VSD
1.2
trr
250
0.60
2.0
1.3
–5.5
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
(VDS=10V)
5
Safe Operating Area (SOA)
P-ch
N-ch
(VDS=–10V)
5
(TC=25°C)
10
0µ
10
ID (pulse) max
IT
M
LI
N)
(O
S
ID (A)
RD
Re (yfs) (S)
)
Re (yfs) (S)
ot
1
s
°C
40
=–
°C
TC
25 C
5°
12
sh
C
(1
5°
12
s
=–
1
1
0.5
25°C
0.5
0.2
0.05
m
°C
40
TC
1m
10
ED
s
5
0.5
0.1
0.5
5
1
0.2
–0.05
8
–0.1
–0.5
ID (A)
0.1
0.5
–6
–1
1
5
ID (A)
10
50
100
VDS (V)
Capacitance-VDS Characteristics (Typical)
VGS=0V
f=1MHz
N-ch
600
VGS=0V
f=1MHz
P-ch
700
P-ch
(TC=25°C)
---10
s
0µ
10
ID (pulse) max
500
---5
D
IT
E
LI
sh
M
(1
(O
S
ID (A)
Coss
50
RD
100
)
N)
ot
Capacitance (pF)
s
---1
---0.5
Crss
Crss
10
10
5
0
10
20
30
40
5
50
0
---10
---20
VDS (V)
---30
---40
---50
---0.1
---0.5
---5
---10
---50 ---100
VDS (V)
IDR-VSD Characteristics (Typical)
PT-Ta Characteristics
P-ch
8
40
---6
With Silicone Grease
Natural Cooling
All Circuits Operating
35
7
---5
6
30
IDR (A)
S=
0V
k
VG
V
1.5
in
VSD (V)
ts
10
0V
---1
1.0
0.5
ea
V
S=
Without Heatsink
5
G
0
---0
0
H
10V
5V
ite
–1
–5
1
20
15
0V
---2
2
fin
In
3
25
ith
---3
W
4
PT (W)
---4
5
0
---1
VDS (V)
N-ch
IDR (A)
Capacitance (pF)
s
m
Coss
50
10
100
Ciss
1m
Ciss
0
---1
---2
VSD (V)
---3
---4
0
50
100
150
Ta (°C)
43