SLA5070 N-channel General purpose External dimensions A Absolute maximum ratings (Ta=25°C) Ratings Symbol FET 1 Unit FET 2 VDSS 150 V VGSS +20, –10 V ID ±7 A ID(pulse) ±15 (PW≤100µs, duty≤1%) A EAS* PT ••• 100 A 5 (Ta=25°C, with all circuits operating, without heatsink) W 60 (Tc=25°C, with all circuits operating, with infinite heatsink) W θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θ j-c 2.08 (Junction-Case, Tc=25°C, with all circuits operating) °C/W VISO 1000 (Between fin and lead pin, AC) Vrms Tch 150 °C Tstg –40 to +150 °C *VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15. ■Equivalent circuit diagram 3 6 8 10 12 14 FET-1 FET-1 FET-2 FET-2 FET-2 FET-2 2 5 7 9 11 13 1 15 Pin 4: NC Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) FET 1 FET 2 10V 4V 6 4V 5 5 (VDS=10V) 7 10V 6 6 5 2.8V 2.6V 3 3 2.4V 2 2 2 2.4V 1 VGS=2.2V VGS=2.2V 0 0 0 2 4 6 8 0 10 2 4 6 8 °C 25°C 3 1 1 4 0 10 0 1 VDS (V) VDS (V) –40°C 4 Tc=125 4 ID (A) 2.6V ID (A) ID (A) FET 1 7 7 2 3 4 VGS (V) RDS(ON)-ID Characteristics (Typical) FET 1 FET 2 100 FET 2 7 200 (VDS=10V) 4V 4V 6 80 VGS=10V 150 ID (A) 100 40 4 3 RDS RDS 5 (mΩ) (ON) 60 (ON) (mΩ) VGS=10V 2 125 °C 25° C –40°C 50 20 0 0 0 0 1 2 3 4 5 6 7 0 1 2 ID (A) 3 4 5 6 7 ID (A) FET 2 (ID=3.5A) 200 (ID=3.5A) 500 400 (mΩ) V 10 S= 4V 300 V 10 RDS (ON) VG 100 RDS (ON) (mΩ) 4V S= VG 200 100 0 –40 0 50 TC (°C) 100 150 0 –40 0 50 TC (°C) 0 1 2 VGS (V) RDS(ON)-TC Characteristics (Typical) FET 1 Tc= 1 100 150 3 4 SLA SLA5070 Electrical characteristics (Ta=25°C) FET 1 Symbol Specification min V(BR)DSS typ max 150 FET 2 Specification Unit Conditions V ID=100µA, VGS=0V min typ max Unit Conditions V ID=100µA, VGS=0V 150 IGSS ±100 nA VGS=20V, –10V ±100 nA VGS=20V, –10V IDSS 100 µA VDS=150V, VGS=0V 100 µA VDS=150V, VGS=0V 2.0 V VDS=10V, ID=250µA 1.0 S VDS=10V, ID=3.5A 4 VTH 1.0 Re(yfs) 7 12 RDS(ON) 2.0 9 V VDS=10V, ID=250µA S VDS=10V, ID=3.5A 80 105 mΩ VGS=10V, ID=3.5A 150 200 mΩ VGS=10V, ID=3.5A 85 115 mΩ VGS=4V, ID=3.5A 170 230 mΩ VGS=4V, ID=3.5A Ciss 1600 pF VDS=10V 870 pF VDS=10V Coss 380 pF f=1.0MHz 320 pF f=1.0MHz Crss 90 pF VGS=0V 210 pF VGS=0V td (on) 35 ns ID=3.5A 25 ns ID=3.5A tr 70 ns VDD 70V 55 ns VDD 70V td (off) 125 ns RL=20Ω 80 ns RL=20Ω tf 90 VSD 1.0 trr 320 1.5 ns VGS=5V 50 V ISD=7A, VGS=0V 1.0 ns IF=±100mA 500 1.5 ns VGS=5V V ISD=7A, VGS=0V ns IF=±100mA Characteristic curves Re(yfs)-ID Characteristics (Typical) FET 1 30 Safe Operating Area (SOA) FET 2 (VDS=10V) FET 1 (VDS=10V) 20 10 0m s 10 10 Re (yfs) (S) =– 5° 12 C 25°C TC 5 =– s 10 m RDS (on) LIMITED s (1 sh C 5° ot 12 25°C ) 1 0.5 1-circuit operation 0.1 1 1 1m ID (pulse) MAX 5 °C 40 ID (A) 4 TC 5 Re (yfs) (S) 10 C 0° (TC=25°C) 20 0.05 0.5 0.5 0.3 0.05 0.1 0.5 1 5 0.3 0.05 7 0.1 0.5 1 5 7 0.01 0.5 1 5 10 50 100 200 VDS (V) ID (A) ID (A) Capacitance-VDS Characteristics (Typical) FET 1 FET 2 VGS=0V f=1MHz 5000 FET 2 VGS=0V f=1MHz 5000 (TC=25°C) 20 10 0µ 10 s 10 m s RDS (on) LIMITED Ciss 500 (1 sh ot 1-circuit operation 0.1 Coss 100 ) 0.5 Coss 100 s 1000 ID (A) 500 0.05 Crss Crss 50 50 40 0 10 20 30 40 50 0 10 20 30 40 50 0.01 0.5 10 50 100 200 PT-Ta Characteristics FET 2 7 7 6 6 5 60 With Silicone Grease Natural Cooling All Circuits Operating 5 10V PT (W) V 10 IDR (A) 4V k 0 sin 1 0 at 1 He 2 ite 3 2 fin 3 4 In VGS=0V ith W 40 4V 20 VGS=0V Without Heatsink 5 0 5 VDS (V) IDR-VSD Characteristics (Typical) FET 1 4 1 VDS (V) VDS (V) IDR (A) Capacitance (pF) 1000 Capacitance (pF) 5 Ciss 1m ID (pulse) MAX 0.5 1.0 VSD (V) 1.5 0 0 0.5 1.0 VSD (V) 1.5 0 50 100 Ta (°C) 150