SANKEN SLA5070

SLA5070
N-channel
General purpose
External dimensions A
Absolute maximum ratings
(Ta=25°C)
Ratings
Symbol
FET 1
Unit
FET 2
VDSS
150
V
VGSS
+20, –10
V
ID
±7
A
ID(pulse)
±15 (PW≤100µs, duty≤1%)
A
EAS*
PT
•••
100
A
5 (Ta=25°C, with all circuits operating, without heatsink)
W
60 (Tc=25°C, with all circuits operating, with infinite heatsink)
W
θ j-a
25 (Junction-Air, Ta=25°C, with all circuits operating)
°C/W
θ j-c
2.08 (Junction-Case, Tc=25°C, with all circuits operating)
°C/W
VISO
1000 (Between fin and lead pin, AC)
Vrms
Tch
150
°C
Tstg
–40 to +150
°C
*VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
3
6
8
10
12
14
FET-1
FET-1
FET-2
FET-2
FET-2
FET-2
2
5
7
9
11
13
1
15
Pin 4: NC
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
FET 1
FET 2
10V
4V
6
4V
5
5
(VDS=10V)
7
10V
6
6
5
2.8V
2.6V
3
3
2.4V
2
2
2
2.4V
1
VGS=2.2V
VGS=2.2V
0
0
0
2
4
6
8
0
10
2
4
6
8
°C
25°C
3
1
1
4
0
10
0
1
VDS (V)
VDS (V)
–40°C
4
Tc=125
4
ID (A)
2.6V
ID (A)
ID (A)
FET 1
7
7
2
3
4
VGS (V)
RDS(ON)-ID Characteristics (Typical)
FET 1
FET 2
100
FET 2
7
200
(VDS=10V)
4V
4V
6
80
VGS=10V
150
ID (A)
100
40
4
3
RDS
RDS
5
(mΩ)
(ON)
60
(ON)
(mΩ)
VGS=10V
2
125
°C
25°
C
–40°C
50
20
0
0
0
0
1
2
3
4
5
6
7
0
1
2
ID (A)
3
4
5
6
7
ID (A)
FET 2
(ID=3.5A)
200
(ID=3.5A)
500
400
(mΩ)
V
10
S=
4V
300
V
10
RDS
(ON)
VG
100
RDS
(ON)
(mΩ)
4V
S=
VG
200
100
0
–40
0
50
TC (°C)
100
150
0
–40
0
50
TC (°C)
0
1
2
VGS (V)
RDS(ON)-TC Characteristics (Typical)
FET 1
Tc=
1
100
150
3
4
SLA
SLA5070
Electrical characteristics
(Ta=25°C)
FET 1
Symbol
Specification
min
V(BR)DSS
typ
max
150
FET 2
Specification
Unit
Conditions
V
ID=100µA, VGS=0V
min
typ
max
Unit
Conditions
V
ID=100µA, VGS=0V
150
IGSS
±100
nA
VGS=20V, –10V
±100
nA
VGS=20V, –10V
IDSS
100
µA
VDS=150V, VGS=0V
100
µA
VDS=150V, VGS=0V
2.0
V
VDS=10V, ID=250µA
1.0
S
VDS=10V, ID=3.5A
4
VTH
1.0
Re(yfs)
7
12
RDS(ON)
2.0
9
V
VDS=10V, ID=250µA
S
VDS=10V, ID=3.5A
80
105
mΩ
VGS=10V, ID=3.5A
150
200
mΩ
VGS=10V, ID=3.5A
85
115
mΩ
VGS=4V, ID=3.5A
170
230
mΩ
VGS=4V, ID=3.5A
Ciss
1600
pF
VDS=10V
870
pF
VDS=10V
Coss
380
pF
f=1.0MHz
320
pF
f=1.0MHz
Crss
90
pF
VGS=0V
210
pF
VGS=0V
td (on)
35
ns
ID=3.5A
25
ns
ID=3.5A
tr
70
ns
VDD 70V
55
ns
VDD 70V
td (off)
125
ns
RL=20Ω
80
ns
RL=20Ω
tf
90
VSD
1.0
trr
320
1.5
ns
VGS=5V
50
V
ISD=7A, VGS=0V
1.0
ns
IF=±100mA
500
1.5
ns
VGS=5V
V
ISD=7A, VGS=0V
ns
IF=±100mA
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
FET 1
30
Safe Operating Area (SOA)
FET 2
(VDS=10V)
FET 1
(VDS=10V)
20
10
0m
s
10
10
Re (yfs) (S)
=–
5°
12
C
25°C
TC
5
=–
s
10
m
RDS (on) LIMITED
s
(1
sh
C
5°
ot
12
25°C
)
1
0.5
1-circuit operation
0.1
1
1
1m
ID (pulse) MAX
5
°C
40
ID (A)
4
TC
5
Re (yfs) (S)
10
C
0°
(TC=25°C)
20
0.05
0.5
0.5
0.3
0.05
0.1
0.5
1
5
0.3
0.05
7
0.1
0.5
1
5
7
0.01
0.5
1
5
10
50
100
200
VDS (V)
ID (A)
ID (A)
Capacitance-VDS Characteristics (Typical)
FET 1
FET 2
VGS=0V
f=1MHz
5000
FET 2
VGS=0V
f=1MHz
5000
(TC=25°C)
20
10
0µ
10
s
10
m
s
RDS (on) LIMITED
Ciss
500
(1
sh
ot
1-circuit operation
0.1
Coss
100
)
0.5
Coss
100
s
1000
ID (A)
500
0.05
Crss
Crss
50
50
40
0
10
20
30
40
50
0
10
20
30
40
50
0.01
0.5
10
50
100
200
PT-Ta Characteristics
FET 2
7
7
6
6
5
60
With Silicone Grease
Natural Cooling
All Circuits Operating
5
10V
PT (W)
V
10
IDR (A)
4V
k
0
sin
1
0
at
1
He
2
ite
3
2
fin
3
4
In
VGS=0V
ith
W
40
4V
20
VGS=0V
Without Heatsink
5
0
5
VDS (V)
IDR-VSD Characteristics (Typical)
FET 1
4
1
VDS (V)
VDS (V)
IDR (A)
Capacitance (pF)
1000
Capacitance (pF)
5
Ciss
1m
ID (pulse) MAX
0.5
1.0
VSD (V)
1.5
0
0
0.5
1.0
VSD (V)
1.5
0
50
100
Ta (°C)
150