DIODE MODULE DD200HB UL;E76102 （M） Power Diode Module DD200HB series are designed for various rectifier circuits. DD200HB has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600V is available for various input voltage. 92±0.5 12 26 4-φ6（M5） mountings base elements in a package for simple（ single and three phase）bridge connections ● Highly reliable glass passivated chips ● High Surge current Capability 60±0.5 48±0.3 24 ● Isolated ● Two 2 18 R8.0 M8×14 5 2 42max 34max （Applications） Various rectifiers, Bettery charagers, DC motor drives 26 DD 80±0.3 １ ２ ３ ■Maximum Ratings （Tj＝25℃ unless otherwise specified） Ratings Item Symbol Unit：㎜ DD200HB120 DD200HB160 Unit VRRM Repetitive Peak Reverse Voltage 1200 1600 V VRSM Non-Repetitive Peak Reverse Voltage 1350 1700 V Symbol IF（AV） Item Conditions Average Forward Current Single Phase, half wave, 180℃conduction, Tc：96℃ IF（RMS） R.M.S. Forward Current Single Phase, half wave, 180℃conduction, Tc：96℃ IFSM Surge Forward Current 1 ／ It It Value for one cycle of surge current Tj Operating Junction Temperature 2 2 Tstg Storage Temperature VISO Isolation Breakdown Voltage（R.M.S.） Mounting Torque 2 cycle, 50/60HZ, peak value, non-repetitive A.C. 1 minute Mounting（M5） Recommended Value 1.5-2.5（15-25） Terminal（M8） Recommended Value 8.8-10 （15-25） Mass Typical Value Ratings Unit 200 A 310 A A 5000/5500 125000 A2S −40 to ＋150 ℃ −40 to ＋125 ℃ 2500 V 2.7（28） N･m 11（115） （㎏f･B） 510 g ■Electrical Characteristics Symbol Item IRRM Repetitive Peak Reverse Current, max. at VRRM. Single phase, half wave, Tj＝150℃ VFM Forward Voltage Drop, max. Forward current 600A, Tj＝25℃, Inst. measurement Junctoin to case （Per a half module） 0.18 ℃/W Rth（j-c） Thermal Impedance, max. SanRex Conditions Ratings Unit 50 mA 1.40 V ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] DD200HB ５００ Average Forward Current vs. Power Dissipation Power Dissipation Pav（W） ２ Maximum Forward Characteristics １０３ D.C. ４００ ５ Single Phase ３００ Per one element ２ Tj＝25℃∼150℃ １０２ Three Phase ２００ ５ Per one element １００ ２ １０１ ０． ５ １． ０ １． ５ ２． ５ ２． ０ ０ ０ ３． ０ ５０ １００ １５０ ２００ ２５０ ３００ ３５０ １５０ Average Forward Current vs. Allowable Case Temperature ６０００ Surge Forward Current I（A） F Allowable Case Temperature Tc（℃） Forward Voltage Drop V（V） F １４０ １３０ Per one element １２０ １１０ １００ ９０ ８０ ７０ Three Phase Single Phase D.C. ６０ ５０ ０ ５０ １００ １５０ ２００ ２５０ ３００ Cycle Surge Forward Current Rating （Non-Repetitive） Per one element ５０００ ４０００ 60Hz ３０００ 50Hz ２０００ Ｔ ｊ=２５℃ start １０００ ０ １００ ３５０ ２ Transient Thermal Impedance θj-c（℃/W） ０． ２ １０１ ５ Average Forward Current I（A） F ２ ５ １０２ Time（Cycles） Transient Thermal Impedance ０． １ Maximum Junction to Case Per one element ５ １００ ２ ５ １０１ B２；Two Pluse Bridge connection B2 ９０ Id（Aav.） １０００ １００ Rth （f-a） ：Thermal resistance between fin and ambient between fin and ambient ８００ Rth:0.5C/W Rth:0.4C/W Rth:0.3C/W Rth:0.2C/W Rth:0.1C/W Rth:0.05C/W ６００ ４００ １１０ １２０ １３０ ２００ １４０ Conduction Angle１８０ ０ ０ １００ ２００ ３００ ４００ ０ １５０ ２５ ５０ ７５ １００ １２５ １５０ Output Current（A） Ambient Temperature（℃） １７５０ Output Current B６；Six pulse Bridge connection ８０ B6 ９０ １５００ Rth （f-a） ：Thermal resistance between fin and B6 ambient Id（Aav.） １２５０ Rth:0.5C/W Rth:0.4C/W Rth:0.3C/W Rth:0.2C/W Rth:0.1C/W Rth:0.05C/W １０００ ７５０ ５００ ２５０ １００ １１０ １２０ １３０ １４０ Conduction Angle１８０ ０ ０ ２５０ ５００ ０ １５０ ２５ ５０ ７５ １００ １２５ １５０ Allowable Case Temperature（℃） Output Current ５ １０-１ ２ Time t（sec） Total Power Dissipation（W） Total Power Dissipation（W） １２００ ５ １０-２ ２ Allowable Case Temperature（℃） ０ １０-３ ２ Output Current（A） Ambient Temperature（℃） SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]