2N2857 MECHANICAL DATA Dimensions in mm (inches) NPN TRANSISTOR 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) FEATURES 12.7 (0.500) min. • SILICON NPN TRANSISTOR 0.48 (0.019) 0.41 (0.016) dia. APPLICATIONS: • AMPLIFIER, OSCILLATOR AND CONVERTER APPLICATIONS UP TO 500MHz 2.54 (0.100) Nom. 4 3 1 2 TO-72 METAL PACKAGE ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 30V VCEO Collector – Emitter Voltage 15V VEBO Emitter – Base Voltage 2.5V IC Collector Current 40mA PD Total Device Dissipation @ TA =25°C 200mW PD Total Device Dissipation @ TC =25°C Operating and Storage Temperature Range 300mW TSTG , TJ Semelab plc. –65 to 200°C Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. e-mail [email protected] Website http://www.semelab.co.uk Prelim. 7/98 2N2857 ELECTRICAL CHARACTERISTICS Parameter (TA = 25°C unless otherwise stated) Test Conditions Min. V(BR)CBO* Collector – Base Breakdown Voltage IC = 1µA IE = 0 30 V(BR)CEO Collector – Emitter Breakdown Voltage IC = 3mA IB = 0 15 V(BR)EBO Emitter – Base Breakdown Voltage IC = 0 2.5 ICBO Collector – Base Cut-off Current hFE DC Current Gain NF Noise Figure CEBO Emitter Base Capacitance Gpe Power Gain (Neutralised) rbB’C’b’c Feedback Time Constant fT Transition Frequency Cre Reverse Capacitance Pc Oscillator Power Output IE = 10µA IE = 0 Tamb= 150°C VCE = 1V IC = 3mA VCE = 6V IC = 1.5mA f = 450MHz RG = 50Ω VEB = 0.5V IC = 0 30 3.8 IC = 1.5mA f = 450MHz RG = 50Ω VCB = 6V IC = 2mA f = 31.9MHz VCE = 6V IC = 5mA VCE = 10V 12.5 4 IC = 0 f = 500MHz IC = 12mA 7 1 0.6 f = 1 MHz VCB = 10V 10 nA 1 µA 150 — 4.5 dB 1.4 f = 1 MHz VCE = 6V Max. Unit V VCB = 15V f = 100 MHz Semelab plc. Typ. 30 Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. e-mail [email protected] Website http://www.semelab.co.uk pF 19 dB 15 ps 1.9 GHz 1 pF mW Prelim. 7/98