BFX48 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON EPITAXIAL TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. APPLICATIONS • It is suitable for a wide range of applications including low noise, low current high gain RF and wide band pulse amplifiers. 2.54 (0.100) Nom. 3 1 2 TO18 PACKAGE Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage (IE = 0) -30V VCEO Collector – Emitter Voltage(IB = 0) -30V VEBO Emitter – Base Voltage (IC = 0) -5V IC Collector Current Ptot Tj, Tstg -100mA Total Power Dissipation Tamb £ 25°C Tcase £ 25°C Storage Temperature, Operating Junction Temperature Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 0.36W 1W -65 to 200°C Document. 2340 Issue 1 BFX48 ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated) Parameter ICES V(BR)CBO V(BR)CEO* Collector Cut–off Current Collector – Base Breakdown Voltage Collector– Emitter Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage VCE(sat)* VBE(sat)* Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Test Conditions CEBO CCBO NF Transistion Frequency -15 V IC = –10mA IB = 0 -30 V IE = –10mA IC = 0 -5 V IC = –1mA IB = -0.1mA IC = –10mA IB = -1mA IC = –50mA IB = -5mA -0.3 IC = –1mA IB = -0.1mA -0.75 IC = –10mA IB = -1mA IC = –50mA IB = -5mA -0.13 -0.1 -0.77 40 80 VCE = -1V 70 130 IC = –10mA VCE = -1V 90 160 IC = –50mA VCE = -1V 20 40 IC = –10mA VCE = -1V IC = –10mA f = 100MHz Collector-Base IE = 0 Capacitance f = 1MHz Turn-off time rbb’Cb’c Feedback Time Constant VCE = -20V IC = -1mA VEB = -0.5V VCB = -10V VCE = -5V -0.14 -0.9 V V -1.1 VCE = -1V f = 1MHz toff mA -30 Capacitance Turn-on time nA IC = 10mA IC = 0 ton -15 IE = 0 Emitter – Base Noise Figure Unit Tamb = 125°C — 30 Tamb = -55°C fT Max. VCE = -20V IC = –100mA DC Current Gain Typ. VBE = 0 IC = –10mA hFE* Min. ` 400 550 4 MHz 5.5 pF 2.2 3.5 f = 100MHz Rg = 100W 3.5 6 dB IC = -50mA IB1 = -5mA 20 50 ns 95 160 ns 40 ps IC = -50mA IB1 = IB2 =-5mA IC = -10mA VCE = -20V f = 80MHz *Pulsed: pulse duration = 300ms, duty cycle = 1% THERMAL CHARACTERISTICS Rqth(j-case) Thermal Resistance Junction - Case Rqth(j-amb) Thermal Resistance Junction - Ambient Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 175 486 °C/W °C/W Document. 2340 Issue 1