SEME 2N3799 LAB MECHANICAL DATA Dimensions in mm (inches) PNP, LOW NOISE AMPLIFIER TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • CECC SCREENING OPTIONS • LOW NOISE AMPLIFIER 2.54 (0.100) Nom. APPLICATIONS: 3 1 • Low Level Amplifier 2 • Instrumentation Amplifiers TO–18 METAL PACKAGE • General Purpose Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ , TSTG RqJA RqJC Semelab plc. Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk –60V –60V –5V –50mA 360mW 2.06mW / °C 1.2W 6.86mW / °C –65 to +200°C 0.49°C/mW 0.15°C/mW Prelim. 4/95 SEME 2N3799 LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. V(BR)CEO Collector – Emitter Breakdown Voltage IC = –10mA IB = 0 –60 V(BR)CBO Collector – Base Breakdown Voltage IE = 0 –60 V(BR)EBO Emitter – Base Breakdown Voltage IC = 0 –5 ICBO Collector Cut-off Current IEBO Emitter Cut-off Current VCE(sat) Collector – Emitter Saturation Voltage VBE(sat) Base – Emitter Saturation Voltage VBE(on) Base – Emitter On Voltage IC = –10mA IE = –10mA –0.01 IE = 0 TA = 150°C –10 mA VEB = –4V IC = 0 –20 nA IC = –100mA IC = –1mA IC = –100mA IC = –1mA IC = –100mA IC = –1mA IB = –10mA (VCE = –5V) IC = –100mA IC = –500mA * Pulse Test: tp £ 300ms, d £ 2%. –0.2 IB = –100mA –0.25 IB = –10mA –0.7 IB = –100mA –0.8 VCE = –5V –0.7 Current Gain Bandwidth Product 1 TA = –55°C 150 — 300 300 IC = –10mA * 250 VCE = –5V IC = –500mA f = 20MHz 30 VCE = –5V IC = –1mA f = 100MHz 100 Typ. Max. Unit 500 Cob Output Capacitance VCB = –5V IE = 0 f = 1MHz 4 Cib Input Capacitance VEB = –0.5V IC = 0 f = 1MHz 8 hie Input Impedance hoe Output Admittance hre Voltage Feedback Ratio hfe Small Signal Current Gain VCE = –10V IC = –1mA f = 1kHz VCE = –10V NF Noise Figure IC = –100mA RG = 3kW Noise: B.W. = 20Hz f = 1kHz B.W. = 200Hz f = 10kHz B.W. = 2kHz f = 1kHz MHz pF kW 10 40 5 60 mhmos 25 x 10-4 900 — 300 Spot: V 300 IC = –1mA f = 100Hz V 225 SMALL SIGNAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. ft V 75 IC = –100mA DC Current Gain Max. Unit V VCB = –50V IC = –10mA hFE Typ. 2.5 4 0.8 1.5 dB 1.8 1.5 1.5 2.5 1) ft is defined as the frequency at which |hfe| extrapolates to untity. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 4/95