BDS10IG BDS11IG BDS12IG SEME LAB MECHANICAL DATA Dimensions in mm(inches) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 10.41 (0.410) 10.67 (0.420) 16.38 (0.645) 16.89 (0.665) SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE 4.83 (0.190) 5.08 (0.200) FEATURES 1 2 3 12.07 (0.500) 19.05 (0.750) • HERMETIC TO257 ISOLATED METAL PACKAGES • HIGH RELIABILITY • MILITARY AND SPACE OPTIONS 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC TO257 – TO257 Isolated Metal Package. Pin 1 – Base Pin 2 – Collector • SCREENING TO CECC LEVELS • ALSO AVAILABLE IN TO220 METAL AND TO220 CERAMIC SURFACE MOUNT PACKAGES Pin 3 – Emitter APPLICATIONS • POWER LINEAR AND SWITCHING APPLICATIONS • GENERAL PURPOSE POWER ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDS10 60V BDS11 80V BDS12 100V 60V 80V 100V VCBO Collector - Base voltage (IE = 0) VCEO Collector - Emitter voltage (IB = 0) VEBO Emitter - Base voltage (IC = 0) 5V IE , IC Emitter , Collector current 15A IB Base current 5A Ptot Total power dissipation at Tcase £ 75°C Tstg Storage Temperature –65 TO 200°C Tj Junction Temperature 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 90W Prelim. 9/98 BDS10IG BDS11IG BDS12IG SEME LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions ICBO Collector cut-off current (IE = 0) ICEO Collector cut-off current (IB = 0) IEBO Emitter cut-off current (IC = 0) VCEO(sus)* VCE(sat)* VBE(sat)* VBE* hFE* fT BDS10 BDS11 BDS12 BDS10 BDS11 BDS12 Min. Typ. Max. VCB = 60V VCB = 80V VCB = 100V VCE = 30V VCE = 40V VCE = 50V 500 500 500 1 1 1 VEB = 5V BDS10 Collector - Emitter BDS11 sustaining voltage (IB = 0) BDS12 Collector - Emitter IC = 5A saturation voltage IC = 10A Base - Emitter IC = 10A saturation voltage Base - Emitter voltage IC = 5A IC = 0.5A DC Current gain IC = 5A IC = 10A Transition frequency IC = 0.5A mA mA mA 1 IC = 100mA Unit 60 80 100 V IB = 0.5A IB = 2.5A 1 3 V IB = 2.5A 2.5 V VCE = 4V VCE = 4V VCE = 4V VCE = 4V VCE = 4V 1.5 250 150 V 40 15 5 3 MHz *Pulsed : Pulse duration = 300 ms , duty cycle = 1.5% SWITCHING CHARACTERISTICS Parameter ton ts tr On Time Storage Time Fall Time (td + tr) Test Conditions Max. IC = 4A VCC = 30V IB1 = 0.4A IC = 4A VCC = 30V IB1 = –IB2 = 0.4A 0.7 1.0 0.8 Unit ms ms ms THERMAL DATA RTHj-case Thermal resistance junction - case Max. 1.4°C/W RTHcase-sink Thermal resistance case - heatsink ** Typ. 1.0°C/W RTHj-a Thermal resistance junction - ambient Max. 80°C/W ** Smooth flat surface using thermal grease. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 9/98