2N5681 2N5682 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON TRANSISTORS 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) ! 2 .5 4 (0 .1 0 0 ) 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 4 5 ° DESCRIPTION The 2N5681 and 2N5682 are silicon expitaxial planar NPN transistors in jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuits The complementary PNP types are the 2N5679 and 2N5680 respectively TO-39 Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated 2N5681 2N5682 VCBO Collector – Base Voltage(IE = 0) 100V 120V VCEO Collector – Emitter Voltage (IB = 0) 100V 120V VEBO Emitter – Base Voltage (IC = 0) 4V IC Continuous Collector Current 1A IB Base Current 0.5A Ptot Total Dissipation at Tcase £ 25°C 10W Tamb £ 25°C 1W Tstg Operating and Storage Temperature Range Tj Junction temperature Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk –65 to +200°C 200°C Prelim.3/00 2N5681 2N5682 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 17.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 175 °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit µA IE = 0 ICBO Collector Cut Off Current for 2N5681 VCB = 100V 1 for 2N5682 VCB = 120V 1 for 2N5681 VCE = 100V 1 for 2N5682 VCE = 120V 1 Tcase = 150°C for 2N5681 VCE = 100V 1 for 2n5682 VCE = 120V 1 for 2N5681 VCE = 70V 10 for 2N5682 VCE = 80V 10 IC = 0 VEB = 4V 1 IB = 0 IC = -10mA VBE = -1.5 ICEV Collector Cut Off Current µA mA IB = 0 ICEO IEBO Collector Cut Off Current Emitter Cut Off Current VCEO(sus)* Collector Emitter Sustaining Voltage VCE(sat)* Collector Emitter Saturation Voltage VBE* Base Emitter Voltage hFE* DC Current Gain fT Transistion Frequency CCBO Collector Base Capacitance hfe Small Signal Current Gain for 2N5681 100 for 2N5682 120 IC = 250mA IB = 25mA 0.6 IC = 500mA IB = 50mA 1 IC = 1A IB = 200mA 2 IC = 250mA VCE = 2V 1 IC = 250mA VCE = 2V 40 IC = 1A VCE = 2V 5 IC = 100mA VCE = 10V f = 10MHz IE = 0 IC = 0.2A VCE = 1.5V f = 1KHz MHz 50 f = 1MHz V 150 30 VCB = 20V µA pF 40 * Pulse test tp = 300ms , d < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.3/00