BFY50 MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Description 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they are intended for general purpose linear and switching applications 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45˚ TO39 PACKAGE Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PTOT Tstg,Tj Rj-case Rj-amb Semelab plc. Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Collector Peak Current Total Power Dissipation @ Tamb £ 25°C @ Tcase £ 25°C Storage and Operatuing Junction Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 80V 35V 6V 1A 1.5A 0.8W 5W –65 to 200°C 35°C / W 218°C / W Prelim.02/00 BFY50 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CBO* Collector – Base Breakdown Voltage IC = 100mA IE = 0 80 V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 30mA IB = 0 35 V(BR)EBO* Emitter – Base Breakdown Voltage IC = 100mA IE = 100mA 6 ICBO Collector Cut-off Current VCB = 60V IE = 0 50 nA TC = 100°C 2.5 m IEBO Emitter Cut-off Current IC = 0 50 nA TC = 100°C 2.5 m VCE(sat) Collector – Emitter Saturation Voltage VBE(sat) Base – Emitter Saturation Voltage hFE* VEB = 5V DC Current Gain V IC = 150mA IE = 15mA 0.14 0.2 IC = 1A IB = 0.1A 0.7 1 IC = 150mA IB = 15mA 0.95 1.3 IC = 1A IB = 0.1A 1.5 2 IC = 10mA VCE = 10V 20 40 IC = 150mA VCE = 10V 30 55 IC = 1mA VCE = 10V 15 30 Min. Typ. A A V V — DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter hfe Small Signal Current Gain hie Imput Impedance Test Conditions VCE = 6V IC = 1mA f = 1kHz 25 VCE = 6V IC = 10mA f = 1KHz 45 VCE = 5V IC = 10mA f = 1.KHz 180 Max. Unit — W 55 x10.6 hrE Reverse Voltage Ratio VCE = 5V IC = 10mA f = 1.KHz hoe Output Admittance VCE = 5V IC = 10mA f = 1.KHz 30 m Ccbo Collector -Base Capacitance VCB = 5V IE = 10mA f = 1.KHz 10 pF fT Transistion Frequency VCE = 10V IC = 50mA 100 MHz td Delay Time IC = 150mA VCC = 10V 15 tr Rise Time IB1= 15mA 40 ts Storage Time IC = 150mA VCC = 10V 300 tf Fall Time IB1= -IB2 = 15mA 60 VBE = -2V 60 — S ns Pulse Duration = 300ms, Duty Cycle = 1% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.02/00