SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004) 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= 1.02 ± 0.10 (0.04 ± 0.004) • CECC SCREENING OPTIONS A 1.40 (0.055) max. • SPACE QUALITY LEVELS OPTIONS • HIGH SPEED SATURATED SWITCHING APPLICATIONS: SOT23 CERAMIC (LCC1 PACKAGE) PAD 1 – Base Underside View PAD 2 – Emitter PAD 3 – Collector Hermetically sealed surface mount version of the popular 2N2222A for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD Rja Tstg,Tj Semelab plc. Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current Total Device Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Storage Temperature,Operating Temp Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 75V 40V 6V 600mA 350mW 2.0mW / °C 350°C/W –55 to 200°C Prelim. 3/00 SEME 2N2222ACSM LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 10mA 40 V V(BR)CBO* Collector – Base Breakdown Voltage IC = 10mA 75 V V(BR)EBO* Emitter – Base Breakdown Voltage IE = 10mA IC = 0 6 V ICEX* Collector Cut-off Current (IC = 0) IB = 0 VCE = 60V 10 nA ICBO* Collector – Base Cut-off Current IE = 0 VCB = 60V 10 nA 10 m IEBO* Emitter Cut-off Current (IC = 0) IC = 0 VEB = 3V (off) 10 nA IBL* Base Current VCE = 60V VEB = 3V (off) 20 nA VCE(sat)* Collector – Emitter Saturation Voltage IC = 150mA IB = 15mA 0.3 IC = 500mA IB = 50mA 1 VBE(sat)* Base – Emitter Saturation Voltage IC = 150mA IB = 15mA IC = 500mA IC = 50mA IC = 0.1mA VCE = 10V 35 IC = 1mA VCE = 10V 50 IC = 10mA VCE = 10V 75 TA = –55°C IC = 10mA VCE = 10V 35 IC = 150mA VCE = 10V 100 IC = 150mA VCE = 1V 50 IC = 500mA VCE = 10V 40 hFE* TC = 125°C DC Current Gain 0.6 1.2 2 A V V — 300 * Pulse test tp = 300ms , d £ 2% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit fT Transition Frequency IC = 20mA VCE = 20V f = 100MHz 300 MHz Cob Output Capacitance VCB = 10V IE = 0 f = 1.0MHz 8 pF Cib Input Capacitance VBE = 0.5V IC = 0 f = 1.0MHz 30 pF hfe Small Signal Current Gain IC = 1mA VCE = 10V f = 1kHz 50 300 IC = 10mA VCE = 10V f = 1kHz 75 375 SWITCHING CHARACTERISTICS (RESISTIVE LOAD) (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit td Delay Time VCC = 30V VBE = 0.5V (off) 10 ns tr Rise Time IC1 = 150mA IB1 = 15mA 25 ns ts Storage Time VCC = 30V IC = 150mA 225 ns tf Fall Time 60 ns IB1 = IB2 = 15mA fT is defined as the frequency at which hFE extrapolates to unity. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 3/00