BUL53BSMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 2 • CERAMIC SURFACE MOUNT PACKAGE • FULL MIL/AEROSPACE TEMPERATURE RANGE • SCREENING OPTIONS FOR MILITARY AND SPACE APPLICATIONS • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE (VCBO = 800V) • FAST SWITCHING (tf = 100ns) • HIGH ENERGY RATING 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD1 Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter FEATURES • Multi-Base design for efficient energy distribution across the chip. • SIgnificantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple guard rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 500V VCEO Collector – Emitter Voltage (IB = 0) 250V VEBO Emitter – Base Voltage (IC = 0) 10V IC Collector Current 12A IC(PK) Peak Collector Current 20A IB Base Current PD Power Dissipation R? Thermal Impedance (when mounted on thermally conducting PCB) Tj Maximum Junction Temperature Tstg Storage Temperature Range Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 3A 60W 3.0°C/W 200°C –55 to +200°C Prelim. 7/00 BUL53BSMD ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus)* V(BR)CBO* V(BR)EBO* ICEO* ICBO* IEBO* VCE(sat)* VBE(sat)* VBE(on)* hFE* Collector - Emitter sustaining voltage Collector - Base breakdown voltage Emitter - Base Test Conditions Min. Typ. Max. IC = 100mA 250 V IC = 1mA 500 V 10 V IB = 1mA IC = 0 Collector cut-off current IB = 0 VCE = 250V 100 Collector - Base cut-off IE = 0 VCB = 500V 10 TC = 125°C 100 VEB = 5V 10 TC = 125°C 100 breakdown voltage current Emitter cut-off current IC = 0 IC = 100mA IB = 10mA 0.05 0.1 IC = 2A IB = 200mA 0.15 0.3 IC = 5A IB = 500mA 0.3 0.6 Base - Emitter IC = 2A IB = 200mA 0.8 1.1 saturation voltage IC = 5A IB = 500mA 0.9 1.2 IC = 1A VCE = 4V 0.8 1.0 IC = 100mA VCE = 4V 20 45 IC = 2A VCE = 4V 20 40 IC = 5A VCE = 4V 20 Collector - Emitter saturation voltage Base - Emitter saturation voltage DC Current gain Unit m A m A m A V V V — * Pulse test tp = 300ms , d £ 2% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter fT Transition frequency Cob Output capacitance Semelab plc. Test Conditions IC = 100mA VCE = 4V f = 10MHz VCB = 20V IE = 0 f = 1.0MHz Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Min. Typ. Max. Unit 20 MHz 200 pF Prelim. 7/00