SEME BUL72B - LCC4 LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 7 6 5 4 0.76 (0.030) 0.51 (0.020) 0.33 (0.013) Rad. 0.08 (0.003) 3 1.65 (0.065) 1.40 (0.055) 1.39 (0.055) 1.15 (0.045) • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING 0.43 (0.017) 0.18 (0.007 Rad. FEATURES LCC4 • TRANSISTOR PINS BASE 4,5 COLLECTOR 1,2,15,16,17,18 EMITTER 6,7,8,9,10,11,12,13 Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage(IE=0) 200V VCEO Collector – Emitter Voltage (IB = 0) 100V VEBO Emitter – Base Voltage (IC = 0) 10V IC Continuous Collector Current 8A IC(PK) Peak Collector Current 12A IB Base Current 2A Ptot Total Dissipation at Tcase = 25°C 5W Rqj-c Thermal Resistance Junction to Case Tstg Operating and Storage Temperature Range Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 25°C/W –55 to +150°C Prelim. 6/00 SEME BUL72B - LCC4 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. VCEO(sus) ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA 100 V(BR)CBO Collector – Base Breakdown Voltage IC = 1mA 250 V(BR)EBO Emitter – Base Breakdown Voltage IE = 1mA 10 ICBO Collector – Base Cut–Off Current ICEO Collector – Emitter Cut–Off Current IEBO Emitter Cut–Off Current hFE* DC Current Gain Typ. Unit V VCB = 250V IB = 0 Max. 10 TC = 125°C 100 VCE = 100V 100 VEB = 9V 10 IC = 0 TC = 125°C IC = 0.3A VCE = 4V 30 80 IC = 3A VCE = 4V 25 60 IC = 5A VCE = 4V 20 50 100 mA mA mA — TC = 125°C VCE(sat)* IC = 1A IB = 0.1A 0.2 Collector – Emitter Saturation Voltage IC = 3A IB = 0.3A 0.5 IC = 5A IB = 0.5A 0.8 IC = 3A IB = 0.3A 1.1 IC = 5A IB = 0.5A 1.3 V VBE(sat)* Base – Emitter Saturation Voltage ft DYNAMIC CHARACTERISTICS Transition Frequency IC = 0.2A VCE = 4V 20 MHz Cob Output Capacitance VCB = 10V f = 1MHz 44 pF V * Pulse test tp = 300ms , d < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 6/00