SEME BUL50A LAB MECHANICAL DATA Dimensions in mm (inches) (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 4.50 (0.177) M ax. 3.55 (0.140) 3.81 (0.150) 2 1 3 1.65 (0.065) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) BSC TO–247 Pin 1 – Base Pad 2 – Collector 15.2 max Pad 3 – Emitter 4.6 max 14 FEATURES 21.0 max 4.25 Dia. 4.15 12.7 max 2 3 1.15 0.95 0.4 • Triple Guard Rings for improved control of high voltages. 1.6 11 SOT93 Pin 1 – Base Pad 2 – Collector • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. 13.6 min 5.5 SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING EFFICIENT POWER SWITCHING MILITARY AND HI–REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES 2.0 4.4 1 • • • • • • Pad 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 1000V VCEO Collector – Emitter Voltage (IB = 0) 500V VEBO Emitter – Base Voltage (IC = 0) 10V IC Continuous Collector Current 15A IC(PK) Peak Collector Current 30A IB Base Current 5A Ptot Total Dissipation at Tcase = 25°C Tstg Operating and Storage Temperature Range Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 125W –55 to +175°C Prelim. 3/95 SEME BUL50A LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. VCEO(sus) ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 100mA 500 V(BR)CBO Collector – Base Breakdown Voltage IC = 1mA 1000 V(BR)EBO Emitter – Base Breakdown Voltage IE = 1mA 10 ICBO Collector – Base Cut–Off Current ICEO Collector – Emitter Cut–Off Current IEBO Emitter Cut–Off Current hFE* DC Current Gain IB = 0 Max. 10 TC = 125°C 100 VCE = 500V 100 VEB = 5V 10 IC = 0 TC = 125°C IC = 0.5A VCE = 4V 15 50 IC = 5A VCE = 4V 10 20 IC = 10A VCE = 4V 5 12 TC = 125°C 4 10 100 mA mA mA — IB = 0.1A 0.05 0.1 IB = 1A 0.2 0.4 IC = 10A IB = 2A 0.3 1.2 IC = 5A IB = 1A 0.9 1.1 IC = 10A IB = 2A 1.0 1.3 1.0 Collector – Emitter Saturation Voltage IC = 5A Unit V VCB = 1000V IC = 0.5A VCE(sat)* Typ. V VBE(sat)* Base – Emitter Saturation Voltage VBE(on) Base – Emitter On Voltage IC = 3A VCE = 4V 0.8 ft DYNAMIC CHARACTERISTICS Transition Frequency IC = 0.2A VCE = 4V 20 MHz Cob Output Capacitance VCB = 20V f = 1MHz 45 pF V V * Pulse test tp = 300ms , d < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 3/95