GP2S09/GP2S24/GP2S26/GP2S27 Subminiature Photointerrupter GP2S09/GP2S24/ GP2S26/GP2S27 ■ Features ■ Applications 1. Compact and thin GP2S09 : Compact DIP long lead type GP2S24 : Compact DIP type GP2S26: Flat lead type GP2S27: Mini-flat package type 1. Cassette tape recorders, VCRs 2. Floppy disk drives 3. Various microcomputerized control equipment 2. Optimum detection distance: 0.6 to 0.8mm 3. Visible light cut-off type ■ Outline Dimensions C0.7 ❈ 4.0 ± 0.2 12.5 (4.0) (4.0) ∗Tolerance:± 0.15mm ∗( ) : Reference dimensions ∗The dimensions indicated by ❈ refer to those measured from the lead base. 0.4+- 0.2 0.1 13.0 ± 1.0 ∗Tolerance:± 0.15mm ∗( ): Reference dimensions 4.0 - 0.4 + 0.2 0.1 4 1.75 + 0.2 0.1 3.0 +- 0.2 0.1 3 1 2 + 3.0 - 0.2 0.1 0.15 - 0.2 0.1 4 1 C0.7 3 1.7 0.4+- 2 ( 0.2 ) Emitter center 2 Internal connection diagram ( Common to 4 models ) 1.7 1 0.75 3 ± 30˚ 4 ( 0.4 ) Detector center ( 0.4 ) Detector center 1.75 ± 20 ˚ 0.75 θ θ : 0 to 20˚ ∗Tolerance:± 0.15mm ∗( ): Reference dimensions ∗The dimensions indicated by ❈ refer to those measured from the lead base. ± 15 ˚ GP2S27 + 0.15 - 0.2 0.1 ( 0.2 ) Emitter center GP2S26 C0.7 4 - 0.15 +- 0.2 0.1 4 - 0.4 +- 0.2 0.1 4 - 0.2 +- 0.3 0 θ θ : 0 to 20˚ ±15˚ 1.7 0.75 0.8 1.7 ± 1.0 4 - (0.6) 4 - 0.5 +- 0.2 0.1 ❈ 4.0± 0.2 3.0 +- 0.2 0.1 4.0 +- 0.2 0.1 3.0 +- 0.2 0.1 ± 0.15 4.0 +0.2 - 0.1 1 1.75 2 + 1 1.75 2 3 3.5 - 1.0 0 C0.7 4 ( 0.4 ) Detector center 3 ( 0.2 ) Emitter center 4 ( Unit : mm ) GP2S24 ( 0.4 ) Detector center ( 0.2 ) Emitter center GP2S09 (0.4) 5.0MAX. ∗Tolerance:± 0.15mm ∗( ) : Reference dimensions 1 2 3 4 Anode Emitter Collector Cathode “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GP2S09/GP2S24/GP2S26/GP2S27 ■ Absolute Maximum Ratings Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissiipation Total power dissipation Operating temperature Storage temperature ∗1 Soldering temperature Input Output ( Ta = 25˚C) Symbol IF VR P V CEO V ECO IC PC P tot T opr T stg T sol Rating 50 6 75 35 6 20 75 100 - 20 to + 85 - 40 to + 100 260 Unit mA V mW V V mA mW mW ˚C ˚C ˚C ∗1 Within 5 seconds ( Soldering areas for each model are shown below ) 1mm∗2 GP2S09, GP2S24 Soldering area: The hatched area more than 1mm ∗2 away from the lower edge of package as shown in the figure below. GP2S27 Soldering area The hatched area more than 0.5mm away from the both edges of package as shown in the figure below. GP2S26 Soldering area: The hatched area more than 2.0mm away from the both edges of package as shown in the figure below. ∗2 GP2S09: 4mm 2.0mm 2.0mm 0.5mm ■ Electro-optical Characteristics Input Output Transfer characteristics Parameter Forward voltage Reverse current Collector dark current ∗3 Collector current Response time ∗4 Rise time Fall time Leak current ( Ta = 25˚C ) Symbol VF IR I CEO IC tr tf I LEAK Conditions I F = 20mA V R = 6V V CE = 20V I F = 4mA, V CE = 2V V CE = 2V, I C = 100 µ A R L = 1kΩ , d = 1mm I F = 4mA, V CE = 2V MIN. 20 - TYP. 1.2 10- 9 45 20 20 - ∗3 The condition and arrangement of the reflective object are shown below. ∗4 Without reflective object The ranking of collector current shall be classified into the following 6 ranks. (GP2S09, GP2S24, GP2S26, GP2S27 ) Rank A B C A or B B or C A, B or C ∗5 Collector-current I C ( µ A ) 20 to 42 34 to 71 58 to 120 20 to 71 34 to 120 20 to 120 ∗5 GP2S24 and GP2S26 and GP2S27 don't have A rank. 0.5mm Test Condition and Arrangement for Collector Current Al evaporation 1mm-thick glass MAX. 1.4 10 10 - 7 120 100 100 0.1 Unit V µA A µA µs µs µA GP2S09/GP2S24/GP2S26/GP2S27 Fig. 2 Power Dissipation vs. Ambient Temperature 60 120 50 100 P tot Power dissipation P ( mW ) Forward current I F ( mA ) Fig. 1 Forward Current vs. Ambient Temperature 40 30 20 10 0 25 50 75 Ambient temperature T a 85 T a = 75˚C 50˚C 25˚C V CE = 2V T a = 25˚C 600 0˚C - 25˚C Collector current I C ( µ A) 100 100 Fig. 4 Collector Current vs. Forward Current 700 200 50 75 85 0 25 Ambient temperature T a ( ˚C) ( ˚C) 500 Forward current I F ( mA ) 40 0 - 25 100 Fig. 3 Forward Current vs. Forward Voltage 50 20 10 5 500 400 300 200 100 2 1 0 0 0.5 1 1.5 Forward voltage V F 2 ( V) 2.5 0 3 350 30 I F = 4mA VCE = 2V I F = 15mA 250 10mA 200 150 10 15 20 25 Forward current I F ( mA ) 120 Relatlve collector current I C ( % ) Ta = 25˚C 5 Fig. 6 Relatlve Collector Current vs. Ambient Temperature Fig. 5 Collector Current vs. Collector-Emitter Voltage Collector current I C ( µ A) 60 20 0 - 25 300 P, P C 80 7mA 100 4mA 50 100 80 60 40 20 2mA 0 0 2 4 6 8 10 Collector-emitter voltage V CE ( V) 12 0 - 25 0 25 50 Ambient temperature T a 75 ( ˚C) 100 GP2S09/GP2S24/GP2S26/GP2S27 Fig. 7 Collector Dark Current vs. Ambient Temperature 10 - 6 5 Fig. 8 Response Time vs. Load Resistance ( GP2S09 ) 100 V CE = 20V 50 Collector dark current I CEO ( A) 2 V CE = 2V I C = 100 µA T a = 25˚C tr 20 10 - 7 Response time (µ s ) 5 2 10 - 8 5 2 10 - 9 tf td 10 5 2 ts 1 0.5 5 0.2 2 10 - 10 0 25 50 Ambient temperature T a 75 ( ˚C) 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 Load resistance R L ( kΩ ) 100 5 10 Fig. 9 Response Time vs. Load Resistance (GP2S24/ GP2S26/GP2S27 ) Test Circuit for Response Time 500 V CE = 2V I C = 100 µA 200 T a = 25˚C 100 50 20 10 5 tr tf VCC Input td Input Output ts 80 90% td tr 1 10 100 Load resistance R L ( kΩ ) ts tf 1000 Fig.10 Relative Collector Current vs. Distance between Sensor and Al Evaporation Glass 100 10% Output 2 1 0.5 0.2 0.1 0.1 Relative collector current ( % ) RL RD Fig.11 Relative Collector Current vs. Card Moving Distance ( 1 ) 100 I F = 4mA V CE = 2V T a = 25˚C 60 40 20 0 3 0 1 2 4 5 Distance between sensor and Al evaporation glass d ( mm ) Relative collector current ( % ) Response time (µ s ) 1000 80 I F = 4mA V CE = 2V d = 1mm T a = 25˚C 60 40 20 0 1 3 5 0 2 4 Card moving distance L ( mm ) 6 7 GP2S09/GP2S24/GP2S26/GP2S27 Test Condition for Distance & Detecting Position Characteristics ( EX : GP2S24 ) Fig.12 Relative Collector Current vs. Card Moving Distance ( 2 ) Relative collector current ( % ) 100 80 Al evaporated glass Correspond to Fig.10 I F = 4mA V CE = 2V d= 1mm T a = 25˚C 60 d Correspond to Fig.11 Correspond to Fig.12 Test condition IF = 4mA VCE = 2V d = 1mm Test condition IF = 4mA VCE = 2V d = 1mm 40 OMS card White 20 d OMS card Black Lmm White Black d Lmm 0 -2 -1 0 1 2 3 4 Card moving distance L ( mm ) 5 6 + Fig.13-a Frequency Response (GP2S09 ) V CE = 2V I C = 100 µA T a = 25˚C -5 RL = 10kΩ - L= 0 + - V CE = 2V I C = 100µ A T a = 25˚C 0 Voltage gain A V ( dB ) Voltage gain A V ( dB ) 0 L= 0 Fig.13-b Frequency Response (GP2S24/ GP2S26/ GP2S27) 1kΩ - 10 -5 RL = 10kΩ - 10 1kΩ - 15 - 15 - 20 102 2 5 5 103 2 104 2 Frequency f ( Hz ) 5 - 20 102 105 103 104 105 Frequency f ( Hz ) 106 Fig.14 Spectral Sensitivity ( Detecting Side ) 100 T a = 25˚C Relative sensitivity ( % ) 80 60 ● 40 20 0 600 700 800 900 1000 Wavelength λ ( nm ) 1100 1200 Please refer to the chapter “ Precautions for Use ” .