SHINDENGEN General Purpose Rectifiers D1UB80 SMT Bridges OUTLINE DIMENSIONS Case : SOP-4 Unit : mm 800V 1A RATINGS ●Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM IO Average Rectified Forward Current 50Hz sine wave, R-load, Ta=25℃ Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 ℃ Current Squared Time I2 t 1ms≦t＜10ms Tj=25 ℃ Ratings -55∼150 150 800 1 30 3 Unit ℃ ℃ V A A ●Electrical Characteristics (If not specified Tc=25℃) Item Symbol Conditions Forward Voltage VF IF=0.4A, Pulse measurement, Rating of per diode VR =800v, Pulse measurement, Rating of per diode Reverse Current IR Thermal Resistance θjl junction to lead Without heatsink θja junction to ambient Without heatsink Ratings Max.0.95 Max.10 Max.25 Max.62.5 Unit V μA ℃/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd A2s D1UB80 Forward Voltage Forward Current IF [A] 10 Tl=150°C [TYP] Tl=25°C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 D1UB80 Forward Power Dissipation Forward Power Dissipation PF [W] 2.5 SIN 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 Average Rectified Forward Current IO [A] Tj = 150°C Sine wave 1.2 D1UB80 Derating Curve Average Rectified Forward Current IO [A] 1.6 1.4 Alumina substrate 50.8mm 2 Soldering land 1mmφ Conductor layer 20µm Substrate thickness 0.64mm 1.2 SIN 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = VRM IO 0 0 VR tp D=tp /T T D1UB80 Derating Curve Average Rectified Forward Current IO [A] 1.6 1.4 1.2 SIN 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Lead Temperature Tl [°C] VR = VRM IO 0 0 VR tp D=tp /T T D1UB80 Peak Surge Forward Capability IFSM 40 10ms 10ms Peak Surge Forward Current IFSM [A] 35 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied 30 25 20 15 10 5 0 1 2 5 10 20 Number of Cycles [cycles] 50 100