SHINDENGEN D1UB80

SHINDENGEN
General Purpose Rectifiers
D1UB80
SMT Bridges
OUTLINE DIMENSIONS
Case : SOP-4
Unit : mm
800V 1A
RATINGS
●Absolute Maximum Ratings (If not specified Tc=25℃)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
Maximum Reverse Voltage
VRM
IO
Average Rectified Forward Current
50Hz sine wave, R-load, Ta=25℃
Peak Surge Forward Current
IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 ℃
Current Squared Time
I2 t
1ms≦t<10ms Tj=25 ℃
Ratings
-55∼150
150
800
1
30
3
Unit
℃
℃
V
A
A
●Electrical Characteristics (If not specified Tc=25℃)
Item
Symbol
Conditions
Forward Voltage
VF
IF=0.4A, Pulse measurement, Rating of per diode
VR =800v, Pulse measurement, Rating of per diode
Reverse Current
IR
Thermal Resistance
θjl
junction to lead Without heatsink
θja junction to ambient Without heatsink
Ratings
Max.0.95
Max.10
Max.25
Max.62.5
Unit
V
μA
℃/W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
A2s
D1UB80
Forward Voltage
Forward Current IF [A]
10
Tl=150°C [TYP]
Tl=25°C [TYP]
1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
1.2
1.4
1.6
D1UB80
Forward Power Dissipation
Forward Power Dissipation PF [W]
2.5
SIN
2
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
Average Rectified Forward Current IO [A]
Tj = 150°C
Sine wave
1.2
D1UB80
Derating Curve
Average Rectified Forward Current IO [A]
1.6
1.4
Alumina substrate
50.8mm 2
Soldering land 1mmφ
Conductor layer 20µm
Substrate thickness 0.64mm
1.2
SIN
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
VR = VRM
IO
0
0
VR
tp
D=tp /T
T
D1UB80
Derating Curve
Average Rectified Forward Current IO [A]
1.6
1.4
1.2
SIN
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Lead Temperature Tl [°C]
VR = VRM
IO
0
0
VR
tp
D=tp /T
T
D1UB80
Peak Surge Forward Capability
IFSM
40
10ms 10ms
Peak Surge Forward Current IFSM [A]
35
1 cycle
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
30
25
20
15
10
5
0
1
2
5
10
20
Number of Cycles [cycles]
50
100