SHINDENGEN S3WB60

SHINDENGEN
Square In-line Package
Bridge Diode
S3WB60
OUTLINE DIMENSIONS
Case : S3WB
Unit : mm
600V 2.3A
RATINGS
● Absolute Maximum Ratings
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
Maximum Reverse Voltage
VRM
Average Rectified Forward Current
IO 50Hz sine wave, R-load, On glass-epoxy substrate, Ta=40℃
Peak Surge Forward Current
IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃
Current Squared Time
I2t 1ms≦t<10ms Tc=25℃
Ratings Unit
-40~150 ℃
150
℃
600
V
2.3
A
120
A
60
A2s
● Electrical Characteristics (Tl=25℃)
Item
Symbol
Conditions
Forward Voltage
VF IF=2A, Pulse measurement, Rating of per diode
Reverse Current
IR VR=VRM, Pulse measurement, Rating of per diode
Thermal Resistance
θjl junction to lead θja junction to ambient Ratings Unit
Max.1.05 V
Max.10 μA
Max.5.5 ℃/W
Max.26.5
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
S3WBx
Forward Voltage
100
Forward Current IF [A]
10
Tl=150°C [TYP]
Tl=25°C [TYP]
1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
1.2
1.4
1.6
S3WBx
Forward Power Dissipation
Forward Power Dissipation PF [W]
16
14
12
SIN
10
8
6
4
2
0
0
1
2
3
4
5
6
Average Rectified Forward Current IO [A]
Tj= 150°C
Sine wave
7
S3WBx
Derating Curve
Average Rectified Forward Current IO [A]
2.4
l
2
PCB
Glass-epoxy substrate
Solering land 5mmφ
1.6
1.2
0.8
0.4
0
0
20
40
60
80
100
120
Ambient Temperature Ta [°C]
Sine wave
R-load
Free in air
140
160
S3WBx
IFSM
Peak Surge Forward Capability
160
10ms 10ms
Peak Surge Forward Current IFSM [A]
1 cycle
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
120
80
40
0
1
2
5
10
20
Number of Cycles [cycles]
50
100