SHINDENGEN D30VTA160

SHINDENGEN
3 Phase Bridge Diode
Diode Module
OUTLINE DIMENSIONS
D30VTA160
Case
: 2F
Case
: D30VTA
(Unit : mm)
1600V 30A
FEATURES
●Dual In-Line Package
●Compact 3 phase bridge
●High voltage,1600V
●Applicable to mount on glass-epoxy substrate
APPLICATION
●Big Power Supply
●Air conditioner
●Factory Automation, Inverter
RATINGS
● Absolute Maximum Ratings (If not specified Tc=25℃)
Item
Symbol
Conditions
Tstg
Storage Temperature
Tj
Operating Junction Temperature
VRM
Maximum Reverse Voltage
IO
Average Rectified Forward Current
50Hz sine wave, R-load With heatsink Tc=105℃
IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Rating of per diode Tj=25℃
Peak Surge Forward Current
Current Squared Time
Dielectric Strength
Mounting Torque
I2t 1ms≦t<10ms Tc=25℃
Vdis Terminals to case, AC 1 minute
TOR (Recommended torque)
● Electrical Characteristics (If not specified Tc=25℃)
Item
Symbol
Conditions
VF IF=10A, Pulse measurement, Rating of per diode
Forward Voltage
Reverse Current
Thermal Resistance
IR
θjc
VR=VRM,
Pulse measurement, Rating of per diode
junction to case Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Ratings
-40~150
150
1600
30
350
Unit
℃
℃
V
A
A
300
2.5
1
A2s
kV
N・m
Ratings
Max.1.05
Unit
V
Max.100
μA
Max.0.7
℃/W
D30VTA160
Forward Voltage
Forward Current IF [A]
10
Tc=150°C [TYP]
Tc=25°C [TYP]
1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
1.2
1.4
1.6
D30VTA160
Derating Curve
Average Rectified Forward Current IO [A]
70
60
Heatsink
Tc
50
40
30
20
10
0
0
20
40
60
80
100
120
Case Temperature Tc [°C]
Sine wave
R-load
with heatsink
140
160
D30VTA160
Forward Power Dissipation
Forward Power Dissipation PF [W]
80
60
40
20
0
0
10
20
30
40
50
Average Rectified Forward Current IO [A]
Tj = 150°C
Peak Surge Forward Capability
IFSM
D30VTA160
800
10ms 10ms
Peak Surge Forward Current IFSM [A]
1 cycle
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied,
per diode
600
400
200
0
1
2
5
10
20
Number of Cycles [cycles]
50
100