SHINDENGEN Square In-line Package Bridge Diode S50VB80 OUTLINE DIMENSIONS Case : S50VB Unit : mm 800V 50A RATINGS ● Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO 50Hz sine wave, R-load, With heatsink, Tc=95℃ Average Rectified Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ Peak Surge Forward Current I2t 1ms≦t＜10ms Ｔc=25℃ Current Squared Time Vdis Terminals to case, AC 1 minute Dielectric Strength TOR （Recommended torque : 0.6N･m） Mounting Torque Ratings Unit -40～150 ℃ 150 ℃ 800 V 50 A 500 A 800 A2ｓ 2 kV 0.8 N･m ● Electrical Characteristics (Tc=25℃) Item Symbol Conditions VF IF=25A, Pulse measurement, Rating of per diode Forward Voltage IR VR=VRM, Pulse measurement, Rating of per diode Reverse Current Thermal Resistance θjc junction to case Ratings Unit Max.1.05 V Max.10 μA Max.0.5 ℃/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S50VBx Forward Voltage 100 Forward Current IF [A] 10 Tc=150°C [TYP] Tc=25°C [TYP] 1 Pulse measurement per diode 0.1 0.2 0.4 0.6 0.8 1 1.2 Forward Voltage VF [V] 1.4 1.6 1.8 S50VBx Forward Power Dissipation 160 Forward Power Dissipation PF [W] 140 120 SIN 100 80 60 40 20 0 0 10 20 30 40 50 60 70 Average Rectified Forward Current IO [A] Tj = Tjmax 80 S50VBx Derating Curve Average Rectified Forward Current IO [A] 80 70 60 SIN 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = VRM IO 0 0 VR tp D=tp /T T S50VBx Peak Surge Forward Capability IFSM 700 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 600 non-repetitive, sine wave, Tj=25°C before surge current is applied 500 400 300 200 100 0 1 2 5 10 20 Number of Cycles [cycles] 50 100