SHINDENGEN Square In-line Package Bridge Diode OUTLINE DIMENSIONS S10VB60 Case : S10VB Unit : mm 600V 10A RATINGS ● Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO 50Hz sine wave, R-load, Ta=40℃ With heatsink θfa=2.4℃/W Average Rectified Forward Current Peak Surge Forward Current Current Squared Time Dielectric Strength Mounting Torque IFSM I2t Vdis TOR 50Hz sine wave, R-load, Ta=40℃ Without heatsink 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ 1ms≦t＜10ms Ｔc=25℃ Terminals to case, AC 1 minute （Recommended torque : 0.5N･m） ● Electrical Characteristics (Tl=25℃) Item Symbol Conditions VF IF=5A, Forward Voltage Pulse measurement, Rating of per diode IR VR=VRM, Pulse measurement, Rating of per diode Reverse Current θjl junction to lead Thermal Resistance Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings Unit -40～150 ℃ 150 ℃ 600 V 10 A 3.7 200 A 110 A2ｓ 2 kV 0.8 N･m Ratings Unit Max.1.05 V Max.10 μA Max.2.8 ℃/W Forward Current IF [A] S10VBx Forward Voltage 10 Tl=150°C [TYP] Tl=25°C [TYP] 1 Pulse measurement per diode 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 S10VBx Forward Power Dissipation Forward Power Dissipation PF [W] 30 SIN 25 20 15 10 5 0 0 2 4 6 8 10 12 Average Rectified Forward Current IO [A] Tj = 150°C Sine wave 14 S10VBx Derating Curve Average Rectified Forward Current IO [A] 12 10 * θfa = 2.4°C/W l 8 l=25mm l=15mm 6 l=5mm 4 without heatsink 2 0 0 20 40 60 80 100 120 Ambient Temperature Ta [°C] Sine wave R-load Free in air * with thermal compound, TOR=5kg-cm 140 160 S10VBx Peak Surge Forward Capability IFSM 250 10ms 10ms 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied Peak Surge Forward Current IFSM [A] 200 150 100 50 0 1 2 5 10 20 Number of Cycles [cycles] 50 100