SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S20VT60 CaseCase : 2F: SVT (Unit : mm) 600V 20A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION ●Big Power Supply ●Air conditioner ●Factory Automation, Inverter RATINGS ● Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Average Rectified Forward Current 50Hz sine wave, R-load, With heatsink, Tc=128℃ IO Peak Surge Forward Current Current Squared Time Dielectric Strength Mounting Torque IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Rating of per diode, Tj=25℃ 2 I t 1ms≦t＜10ms Ｔc=25℃ Vdis Terminals to case, AC 1 minute TOR （Recommended torque : 0.6N･m） ● Electrical Characteristics (If not specified Tc=25℃) Item Symbol Conditions Forward Voltage Pulse measurement, Rating of per diode VF IF=7A, Reverse Current Thermal Resistance IR θjc VR=VRM, Pulse measurement, Rating of per diode junction to case Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings -40～150 150 600 20 Unit ℃ ℃ V A 300 A 300 2 0.8 A2s kV N･m Ratings Max.1.05 Unit V Max.10 μA Max.0.55 ℃/W S20VTx Forward Voltage 100 Forward Current IF [A] 10 Tc=150°C [TYP] Tc=25°C [TYP] 1 Pulse measurement per diode 0.1 0.4 0.5 0.6 0.7 0.8 0.9 Forward Voltage VF [V] 1 1.1 1.2 S20VTx Forward Power Dissipation Forward Power Dissipation PF [W] 80 60 40 20 0 0 5 10 15 20 25 30 Average Rectified Forward Current IO [A] Tj= 150°C Sine wave 35 S20VTx Forward Power Dissipation Forward Power Dissipation PF [W] 80 60 40 20 0 0 5 10 15 20 25 30 Average Rectified Forward Current IO [A] Tj= 150°C Sine wave 35 S20VTx IFSM Peak Surge Forward Capability 400 10ms 10ms Peak Surge Forward Current IFSM [A] 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied 300 200 100 0 1 2 5 10 20 Number of Cycles [cycles] 50 100