SHINDENGEN Schottky Rectifiers (SBD) Dual OUTLINE DIMENSIONS S1ZAS4 Case : 1Z iUnit : mm 40V 1.2A FEATURES ● SMT ● Tj150℃ ● PRRSM avalanche ● Array guaranteed APPLICATION ● Switching power supply ● DC/DC converter ● Home Appliances, Office Equipment ● Telecommunication RATINGS ●Absolute Maximum Ratings (If not specified Tl=25℃) Item Symbol Tstg Storage Temperature Operating Junction Temperature Tj VRM Maximum Reverse Voltage Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Average Rectified Forward Current Peak Surge Forward Current Repetitive Peak Surge Reverse Power IO IFSM PRRSM Conditions 50Hz sine wave, R-load, On alumina substrate, 1 element operation, Ta=49℃ 50Hz sine wave, R-load, On alumina substrate, 2 element operation, Ta=45℃ 50Hz sine wave, R-load, On glass-epoxy substrate, 1 element operation, Ta=47℃ 50Hz sine wave, R-load, On glass-epoxy substrate, 2 element operation, Ta=43℃ 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃ Pulse width 10μs, Rating of per diode, Tj=25℃ ●Electrical Characteristics (If not specified Tl=25℃) Item Symbol Conditions Forward Voltage VF IF=1A, Pulse measurement, Rating of per diode IR Reverse Current VR =VRM , Pulse measurement, Rating of per diode Cj Junction Capacitance f=1MHz, VR=10V, Rating of per diode θjl junction to lead Thermal Resistance θja junction to ambient, On alumina substrate, 1 element operation junction to ambient, On alumina substrate, 2 element operation junction to ambient, On glass-epoxy substrate, 1 element operation junction to ambient, On glass-epoxy substrate, 2 element operation ＊： Raitng of per diode Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings -40∼150 150 40 45 1.2 0.9* 1.0 0.72* 40 160 Unit ℃ ℃ V V A A W Ratings Unit Max.0.55 V Max.1 mA Typ.65 pF Max.25 Max.93 Max.140* ℃/W Max.120 Max.186* S1ZAS4 Forward Voltage Forward Current IF [A] 10 1 Tl=150°C [MAX] Tl=150°C [TYP] Tl=25°C [MAX] Tl=25°C [TYP] 0.1 Pulse measurement per diode 0.01 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 Junction Capacitance Cj [pF] 0.1 10 100 10 Junction Capacitance Reverse Voltage VR [V] 1 S1ZAS4 f=1MHz Tl=25°C TYP per diode S1ZAS4 Reverse Current 1000 100 Reverse Current IR [mA] Tl=150°C [MAX] Tl=150°C [TYP] 10 Tl=125°C [TYP] Tl=100°C [TYP] 1 Tl=75°C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 Reverse Voltage VR [V] 30 35 40 S1ZAS4 Reverse Power Dissipation 2.5 Reverse Power Dissipation PR [W] per diode DC D=0.05 2 0.1 0.2 0.3 1.5 0.5 1 SIN 0.5 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T S1ZAS4 Forward Power Dissipation 2 Forward Power Dissipation PF [W] per diode 1.5 D=0.8 1 0.05 0.1 0.2 0.3 SIN DC 0.5 0.5 0 0 0.5 1 1.5 2 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T S1ZAS4 Derating Curve 2.5 Average Rectified Forward Current IO [A] 1-element conduction 2 Alumina substrate Soldering land 1mmφ Conductor layer 20µm Substrate thickness 0.64mm DC D=0.8 1.5 0.5 SIN 0.3 1 0.2 0.1 0.5 0 0.05 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 20V IO 0 0 VR tp D=tp /T T S1ZAS4 Derating Curve Average Rectified Forward Current IO [A] 2 2-element conduction, per diode 1.5 Alumina substrate Soldering land 1mmφ Conductor layer 20µm Substrate thickness 0.64mm DC D=0.8 0.5 1 SIN 0.3 0.2 0.5 0.1 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 20V IO 0 0 VR tp D=tp /T T S1ZAS4 Derating Curve 2 Average Rectified Forward Current IO [A] 1-element conduction DC 1.5 Glass-epoxy substrate Soldering land 1mmφ Conductor layer 35µm D=0.8 0.5 SIN 1 0.3 0.2 0.1 0.5 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 20V IO 0 0 VR tp D=tp /T T S1ZAS4 Derating Curve Average Rectified Forward Current IO [A] 1.6 2-element conduction, per diode 1.4 1.2 DC D=0.8 1 0.5 0.8 SIN 0.3 0.6 0.2 0.4 0.1 0.2 0 Glass-epoxy substrate Soldering land 1mmφ Conductor layer 35µm 0.05 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 20V IO 0 0 VR tp D=tp /T T S1ZAS4 Peak Surge Forward Capability IFSM 60 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 50 non-repetitive, sine wave, Tj=125°C before surge current is applied 40 30 20 10 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10µs) Ratio 10 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP