SHINDENGEN D1F20

SHINDENGEN
General Purpose Rectifiers
Single
OUTLINE DIMENSIONS
D1F20
Case
: 1F: 1F
Case
Unit : mm
200V 1A
FEATURES
● High
reliability with superior moisture
resistance
● Applicable to Automatic Insertion
APPLICATION
● Conventional Rectification
● Power source(Power Supply)
● Home Appliances, Office Equipment
● Telecommunication, Factory Automation
RATINGS
●Absolute Maximum Ratings (If not specified Tl=25℃)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
Maximum Reverse Voltage
VRM
Average Rectified Forward Current
IO
50Hz sine wave, R-load, Ta=25℃ On alumina substrate
50Hz sine wave, R-load, Ta=25℃
Peak Surge Forward Current
IFSM
On glass-epoxy substrate
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25℃
●Electrical Characteristics (If not specified Tl=25℃)
Item
Symbol
Conditions
Forward Voltage
VF
IF=1A,
Pulse measurement
Reverse Current
VR=V RM, Pulse measurement
IR
Thermal Resistance
θjl
θja
junction to lead
junction to ambient
On alumina substrate
junction to ambient
On glass-epoxy substrate
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Ratings
-55∼150
150
200
1
0.75
25
Unit
℃
℃
V
A
Ratings
Max.1.1
Max.10
Unit
V
μA
Max.23
Max.108
Max.157
℃/W
A
D1Fx
Forward Voltage
Forward Current IF [A]
10
Tl=150°C [TYP]
Tl=25°C [TYP]
1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
1.2
1.4
1.6
D1Fx
Forward Power Dissipation
2
Forward Power Dissipation PF [W]
SIN
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Average Rectified Forward Current IO [A]
Tj = 150°C
Sine wave
1.6
D1Fx
Derating Curve
Average Rectified Forward Current IO [A]
1.6
1.4
Alumina substrate
Soldering land 2mmφ
Conductor layer 20µm
Substrate thickness 0.64mm
1.2
SIN
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
VR = VRM
IO
0
0
VR
tp
D=tp /T
T
D1Fx
Derating Curve
Average Rectified Forward Current IO [A]
1.4
1.2
Glass-epoxy substrate
Soldering land 2mmφ
Conductor layer 35µm
1
SIN
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
VR = VRM
Sine wave
R-load
Free in air
IO
0
0
VR
tp
D=tp /T
T
D1Fx
Peak Surge Forward Capability
IFSM
50
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
Peak Surge Forward Current IFSM [A]
40
30
20
10
0
1
2
5
10
20
Number of Cycles [cycles]
50
100