SONY 1T403

1T403
Variable Capacitance Diode
Description
The 1T403 is a variable capacitance diode
designed for electronic tuning of VHF TV tuners and
CATV tuners using a super-small-miniature flat
package (SSVC).
Features
• Super-small-miniature flat package
• Low series resistance: 0.8 Ω Max. (f=470 MHz)
• Large capacitance ratio: 15.0 Typ.
(C1/C28)
• Small leakage current: 10 nA Max. (VR=28 V)
• Capacitance deviation in a matching group:
within 2 %
Applications
Electronic tuning of TV and CATV tuners
M-290
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage
VR
30
V
• Peak reverse voltage
VRM
35
V
(RL≥10 kΩ)
• Operating temperature Topr
–20 to +75
°C
• Storage temperature
Tstg –65 to +150 °C
Structure
Silicon epitaxial planar type diode
Electrical Characteristics
Item
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
Capacitance
deviation in a
matching group
(Ta=25 °C)
Symbol
Conditions
IR
C1
C28
C1/C28
rs
VR=28 V
VR=1 V, f=1 MHz
VR=28 V, f=1 MHz
∆C
Min.
34.61
2.321
13.5
CD=14 pF, f=470 MHz
VR=1 to 28 V, f=1 MHz
Typ.
15.0
0.75
Max.
Unit
10
42.31
2.714
nA
pF
pF
0.80
Ω
2
%
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E95916-TE
1T403
Diode capacitance vs. Reverse voltage
Reverse current vs. Ambient temperature
100
Ta=25°C
VR=28V
50
20
IR-Reverse current (pA)
C-Diode capacitance (pF)
100
10
5
10
2
1
1
2
5
10
20
VR-Reverse voltage (V)
50
1
–20
Forward voltage vs. Ambient temperature
45
VR-Reverse voltage (V)
IF=1mA
VF-Forward voltage (V)
80
Reverse voltage vs. Ambient temperature
0.80
0.70
0.60
0.50
–20
0
20
40
60
Ta-Ambient temperature (°C)
0
20
40
60
Ta-Ambient temperature (°C)
80
—2—
IR=10µA
40
35
30
–20
0
20
40
60
Ta-Ambient temperature (°C)
80
1T403
Diode capacitance vs. Ambient temperature
1.03
C (Ta)/C (25°C)-Diode capacitance
VR=1V
1.02
VR=2V
VR=7V
1.01
VR=28V
VR=15V
1.00
0.99
0.98
–20
0
20
40
60
Ta-Ambient temperature (°C)
80
Temperature coefficient of diode capacitance
Reverse current vs. Reverse voltage
1000
Temperature coefficient (ppm/°C)
100
IR-Reverse current (pA)
Ta=80°C
10
Ta=60°C
Ta=25°C
500
200
100
50
1
1
0.1
1
3
10
30
VR-Reverse voltage (V)
—3—
2
20
5
10
VR-Reverse voltage (V)
50
1T403
Package Outline
Unit : mm
0.2 M
A
M-290
0.2 ± 0.05
10° MAX
1.7 ± 0.1
1.3 ± 0.1
A
0.8 ± 0.1
c
b
10° MAX
0.7 ± 0.1
BASE METAL WITH PLATING
c
0.11 ± 0.005
+ 0.05
0.11 –
0.01
b
0.3 ± 0.025
0.05
0.3 –+ 0.02
PACKAGE MATERIAL
EPOXY RESIN
LEAD TREATMENT
SOLDER PLATING
EIAJ CODE
LEAD MATERIAL
COPPER
JEDEC CODE
PACKAGE WEIGHT
0.002g
SONY CODE
M-290
Mark
1
S3
2
1 : Cathode
2 : Anode
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